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Dose Rate Effects During Damage Accumulation in Silicon

  • M.-J. Caturla (a1) and T. Diaz de la Rubia (a1)


We combine molecular dynamics and Monte Carlo simulations to study damage accumulation and dose rate effects during irradiation of Silicon. We obtain the initial stage of the damage produced by heavy and light ions using classical molecular dynamics simulations. While heavy ions like As or Pt induce amorphization by single ion impact, light ions like B only produce point defects or small clusters of defects. The amorphous pockets generated by heavy ions are stable below room temperature and recrystallize at temperatures below the threshold for recrystallization of a planar amorphous-crystalline interface. The damage accumulation during light ion irradiation is simulated using a Monte Carlo model for defect diffusion. In this approach, we study the damage in the lattice as a function of dose and dose rate. A strong reduction in the total number of defects left in the lattice is observed for lower dose rates.



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1. Morehead, F.F. Jr., Crowder, B.L., in Ion Implantation. ed. Ewisen, F.H., Chadderton, L.T. Gordon, B. and Breach Science Publishers (1971) p 25
2. Narayan, J., Oen, O.S., Fathy, D. and Holland, O.W., Materials Letters 3, 67 (1985)
3. Diaz de la Rubia, T., Gilmer, G.H., Phys. Rev. Lett. 74, 2507 (1995)
4. Caturla, M-J, Marques, L. A., Rubia, T. Diaz de la and Gilmer, G.H., Phys. Rev. B (accepted for publication)
5. Swanson, M.L., Parsons, J.R., Hoelke, C. W., Rad. Eff. 9, 249 (1971)
6. Bai, G., Nicolet, M.A., J. Appl. Phys. 70, 6494 (1991)
7. Holland, O.W., Pennycook., S.J. Albert, G. L., Appl. Phys. Lett. 55, 2503 (1989)
8. Goldberg, R.D., Williams, J.S., Elliman, R.G., Nucl. Instrum. and Meth. B 106, 242 (1995)
9. Cellini, C., Camera, A., Berti, M., Gasparotto, A., Steer, D., Servidori, M., Milita, S., Nucl. Instrum. and Methods B96, 227 (1995)
10. Holland, O.W., Fathy, D., Narayan, J., Oen, O.J., Rad. Eff. 90, 127 (1985)
11. Tian, S., Yang, S-H, Morris, S., Parab, K., Tasch, F., Jamenitsa, D., Reece, R., Freer, B., Ximonton, R.B., Magee, C., J. Electrochem. Soc. 142, 3215 (1995)
12. Robinson, M.T. and Torrens, I.M., Phys. Rev. B9, 5008 (1974)
13. Ziegler, J.F., Biersack, J.P., Littmark, U. in The stopping and Range of Ions in Solids, Vol.1 of The Stopping and Range of Ions in Matter, ed. Ziegler, J.F. (Pergamon, New York, 1985) p. 25 ff
14. Jaraiz, M., Gilmer, G. H. and Diaz de la Rubia, T., Appl. Phys. Lett. 68, 409 (1996)
15. Stillinger, F.H. and Weber, T.A., Phys. Rev. B31, 5262 (1985)
16. Lindhard, J. and Sharff, M., Phys. Rev. 124, 128 (1961)
17. Marques, L. A., Caturla, M-J, Gilmer, G.H., Rubia, T. Diaz de la, J. Appl. Phys. 80, 6160 (1996)
18. Spaepen, F., Tumbull, D. in Laser Solid Interactions and Laser Processing, ed. Ferris, S.D., Leamy, H.J., Poate, J.M., Mat. Res. Soc., Boston, 1978
19. Lu, G.-W., Nygren, E., Aziz, M.J., J. Appl. Phys. 70, 5323 (1991)
20. Williams, J.S., Elliman, R.G., Phys. Rev. Lett. 51, 1069 (1983)
21. Priolo, F., Battaglia, A., Nicotra, R., Appl. Phys. Lett. 57, 768 (1990)
22. Foad, M.A., England, J.G., Moffatt, S., Armour, D.G., Proceedeings for the IIT'96 conference
23. Gilmer, G.H., Rubia, T. Diaz de la, Jaraiz, M., Stock, D., Nucl. Instrum. and Methods B102, 247 (1995)
24. Zhu, J., Diaz de la Rubia, T., Yang, L., Mailhiot, C. and Gilmer, G. H., Phys. Rev. B 54, 4741 (1996)


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