Skip to main content Accessibility help
×
Home

Dose Rate Dependence of the Amorphization of Silicon Carbide

  • L.L. Snead (a1), S.J. Zinkle (a1), W.S. Eatherly (a1), D.K. Hensley (a2), N.L. Vaughn (a1) and J. W. Jones (a1)...

Abstract

Single crystal silicon carbide (SiC) has been 2 MeV silicon ion irradiated in various irradiation temperature and ion flux ranges to measure the effect of these parameters on the critical dose for amorphization. The temperature and flux range for which amorphization was observed ranged from 80 to 400 K and 0.066 to 3 × 104 dpa/s, respectively. The critical dose, Dcrit was found by locating the depth of the boundary between partially crystalline and fully amorphous material using dark field TEM from samples prepared in cross section. This depth was compared to the damage profile as calculated using the TRIM-96 code. The temperature dependence of Dcrit is found to agree well with previously reported values, though new evidence suggests a defect species becoming mobile in the 250-300 K range. Also of significance is that Dcrit was dependent on flux at 340 K, ranging from 0.79 displacements per atom at the lowest ion flux to ∼0.6 dpa at the highest flux level. The dose rate dependence of Dcrit, is compared with a chemical rate theory model previously described by the authors. It is seen that the dose rate dependence is substantially weaker than theorized. An extrapolation of the measured dose rate dependence is also compared with recent data on fast neutron amorphized SiC.

Copyright

References

Hide All
1. White, C.W., McHargue, C.J., Sklad, P.S., Boatner, L.A., and Farlow, G.C., Mater. Sci. Reports 4 (2-3), 41 (1989).
2. Hart, R.R., Dunlap, H.L., and Marsh, O.J., Radiat. Eff. 9, 261 (1971).
3. Williams, J.M., McHargue, C.J., and Appleton, B.R., Nucl. Instrum and Meth. 209/210, 317 (1983).
4. Spitznagel, J.A., Wood, S., Choyke, W.J. et al., Nucl. Instrum. Meth. in Phys. Res. B16, 237 (1986).
5. Edmond, J.A., Davis, R.F., Withrow, S.P., and More, K.L., J. Mater. Res. 3 (2), 321 (1988).
6. Chechenin, N.G., Bourdelle, K.K., Suvorov, A.V., Suvorov, A.V., and Kastilio-Vitloch, A.X., Nucl. Instrum. and Meth. in Phys. Res. B65, 341 (1992).
7. Musumeci, P., e. al, e. al et al., Nucl. Instrum in Phys. Res. B 116, 327 (1996).
8. Weber, W.J., Yu, N., Wang, L.M., and Hess, N.J., J. Nucl. Mat. 244, 258 (1997).
9. Snead, L.L. and Zinkle, S.J., in MRS Symposium on Microstructure of Irradiated Materials, edited by Robertson, I.M., Rehn, L.E., Zinkle, S.J., and Phythian, W.J. (MRS, Inc., Boston MA., 1995), Vol. 373, p. 377.
10. Weber, W.J., Wang, L.M., and Yu, N., Nucl. Instrum. Meth. Phys. Res. B 116, 322 (1996).
11. Heft, A., Wendler, E., Heindl, J. et al., Nucl. Instr. Meth. B 113, 239 (1996).
12. Kinoshita, C. and Zinkle, S.J., J. Nucl. Mater. 233–237, 100 (1996).
13. Matsunaga, A., Kinoshita, C., Nakai, K., and Tomokiyo, Y., J. Nucl. Mater. 179–181, 457 (1991).
14. Inui, H., Mori, H., and Fujita, H., Phil. Mag. B 61, 107 (1990).
15. Inui, H., Mori, H., and Sakata, T., Phil. Mag. B 66 (6), 737 (1992).
16. Inui, H., Phil. mag. B 65, 1 (1992).
17. Snead, L.L. and Zinkle, S.J., in Microstructure Evolution During Irradiation, MRS Symposium Proceedings, edited by Robertson, I.M., Was, G.S., Hobbs, L.W., and Rubia, T. Diaz de ]a (MRS, Pittsburgh, 1997), Vol. 439, p. 595.
18. Weber, W.J. and Wang, L.M., Nucl. Instrum. Meth. Phys. Res. B 106, 298 (1995).
19. Linros, J., Elliman, R.G., and Brown, W.L., J. Mater. Res. 3 (6), 1208 (1988).
20. Snead, L.L., Zinkle, S.J., Hay, J.C., and Osborne, M.C., Nucl. Instrum. Meth. in Phys. Res. B 141, 123 (1997).
21. Ziegler, J.F., Biersak, J.P., and Littmark, U., The Stopping and Range of Ions in Solids (Pergamon Press, New York, 1985).
22. Weber, W.J., Wang, L.M., Yu, N., and Hess, H.J., Mat. Sci. Eng. A253, 62 (1998).
23. Rubia, T. Diaz de la, Caturla, M.-J., and Tobin, M., in Microstructure of Irradiated Materials, MRS Symposium Proceedings, edited by Robertson, I.M., Rehn, L.E., Zinkle, S.J., and Phythian, W.J. (Materials Research Society, Pittsburgh, 1995), Vol. 373, p. 555.
24. Motta, A.T. and Olander, D.R., Acta Metall. Mater. 38, 2175 (1990).
25. Snead, L.L. and Hay, J.C., accepted J. Nucl. Mater. (1998).

Dose Rate Dependence of the Amorphization of Silicon Carbide

  • L.L. Snead (a1), S.J. Zinkle (a1), W.S. Eatherly (a1), D.K. Hensley (a2), N.L. Vaughn (a1) and J. W. Jones (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed