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Doping of C60 Films Using High Energy Boron Ion Implantation

  • Zhong-Min Ren (a1), Yuan-Cheng Du (a1), Xia-Xing Xiong (a1), Zhi-Feng Ying (a1), Fu-Ming Li (a1) and Xing-Long Xu (a2)...

Abstract

C60 films, which are deposited by partially ionized beam deposition (PIBD), are doped by 100 keV boron ion implantation at dose ranging from 3*1014 to 1*1016 cm2 The implantation process has been studied using Fourier transform infrared spectroscopy (FTIR), Raman spectra and X-ray diffraction (XRD) analyses. Almost all C60 soccer-balls in the doped region in the films are found to be broken at dose of 1*1016 cm2, while at dose less than 6*1014 cm2 a few C60 molecules remain undestroyed and maintain the original structural properties.

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Doping of C60 Films Using High Energy Boron Ion Implantation

  • Zhong-Min Ren (a1), Yuan-Cheng Du (a1), Xia-Xing Xiong (a1), Zhi-Feng Ying (a1), Fu-Ming Li (a1) and Xing-Long Xu (a2)...

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