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Doping of Al-catalyzed Vapor-liquid-solid Grown Si Nnanowires

Published online by Cambridge University Press:  01 February 2011

Sung Jin Whang ,
Sung Joo Lee ,
Wei Feng Yang ,
Hai Chen Zhu ,
Han Lu Gu ,
Byung Jin Cho  and
Yun Fook Liew
Sung Jin Whang
Affiliation:
g0306273@nus.edu.sg, National University of Singapore, Electrical and Computer Engineering, Block E4A #02-04 Engineering Drive 3, Singapore, Singapore, 117576, Singapore
Sung Joo Lee
Affiliation:
elelsj@nus.edu.sg, National University of Singapore, Electrical and Computer Engineering, Block E4A #02-04 Engineering Drive 3, Singapore, Singapore, 117576, Singapore
Wei Feng Yang
Affiliation:
g0500110@nus.edu.sg, National University of Singapore, Electrical and Computer Engineering, Block E4A #02-04 Engineering Drive 3, Singapore, Singapore, 117576, Singapore
Hai Chen Zhu
Affiliation:
haichen_zhu@nus.edu.sg, National University of Singapore, Electrical and Computer Engineering, Block E4A #02-04 Engineering Drive 3, Singapore, Singapore, 117576, Singapore
Han Lu Gu
Affiliation:
g0503568@nus.edu.sg, National University of Singapore, Electrical and Computer Engineering, Block E4A #02-04 Engineering Drive 3, Singapore, Singapore, 117576, Singapore
Byung Jin Cho
Affiliation:
elebjcho@nus.edu.sg, National University of Singapore, Electrical and Computer Engineering, Block E4A #02-04 Engineering Drive 3, Singapore, Singapore, 117576, Singapore
Yun Fook Liew
Affiliation:
LIEW_Yun_Fook@dsi.a-star.edu.sg, National University of Singapore, Electrical and Computer Engineering, Block E4A #02-04 Engineering Drive 3, Singapore, Singapore, 117576, Singapore
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Abstract

We successfully synthesized high quality single crystal Si nanowires using Al catalyst via vapor-liquid-solid (VLS) mechanism, having diameters ranging from 10 to 200 nm with 10∽20 §­ of length. Characterization of physical and chemical properties of Al-catalyzed Si nanowires using transmission electron microscope (TEM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) analysis showed that single crystal Si nanowires can be grown with Al-catalyst at 540 ¡C and selective etching of Al existing at the tip of nanowire can provide metal-free Si nanowires that are compatible with conventional Si-based IC process. By using plasma doping method, it was confirmed that the doping level can be controlled and the boron was successfully introduced on Si substrate with 3×1022/cm3 of peak doping concentration.

Keywords

nanostructureAlcatalytic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1018: Symposium EE – Applications of Nanotubes and Nanowires , 2007 , 1018-EE05-20
Copyright
Copyright © Materials Research Society 2007

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References

1. Cui, Y., Duan, X., Hu, J., and Lieber, C. M., J. Phys. Chem. B, 104, (2000)Google Scholar
2. Mizuno, B., Nakayama, I., Takase, M., Nakaoka, H., Kubota, M., Surface and Coatings Technology 85 (1996)Google Scholar
3. Sasaki, Y., Jin, C. G., Tamura, H., Mizuno, B., Higaki, R., Satoh, T., Mjima, K., sauddin, H., Takagi, K., Ohmi, S., Tsutsui, K., and Iwai, H., VLSI Technology (2004)Google Scholar