Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-18T02:23:17.823Z Has data issue: false hasContentIssue false
  • English
  • Français

Doping Efficiency of N-Type a-Si:H Doped with a Liquid Organic Source

Published online by Cambridge University Press:  01 January 1993

K. Gaughan ,
ZHAOHUI Lin ,
J.M. Viner ,
P.C. Taylor  and
P.C. Mathur
K. Gaughan
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
ZHAOHUI Lin
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
J.M. Viner
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
P.C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
P.C. Mathur
Affiliation:
Department of Physics, University of Delhi, New Delhi, 110007, India
Get access

Abstract

N-type amorphous silicon films were grown using a mixture of silane and tertiarybutylphosphine (TBP-C4H11P) vapor in a plasma enhanced chemical vapor deposition system. The concentration of TBP in silane was varied from 0 to 3% by volume. As expected, at low doping levels, the photoluminescence (PL) intensity associated with both the band-tail recombination (peak at 1.3 eV) and deep-defect recombination (peak at 0.8 eV) decreased as the impurity concentration increased, but for TBP concentrations > 0.1% the PL intensity increased again. For moderate doping levels the activation energy for conductivity leveled off at ∼ 0.2 eV. For concentrations of TBP > 0.1% the activation energy for dark conductivity increased. A shift in the optical gap was observed for the highest impurity concentrations due to the incorporation of carbon from the TBP. These results are interpreted as a pronounced decrease in the doping efficiency for heavily doped films (> 0.1%) perhaps influenced by the increased carbon concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 503
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Spear, W.E. and Gaughan, P.G., Solid State Commun. 17, 1193 (1975); Spear, W.E. and LeComber, P.G., Philos. Mag. 33, 935 (1976).Google Scholar
2. Gaughan, K., Hershgold, S., Viner, J.M. and Taylor, P.C., J. Non-Cryst. Solids, 137&138, 709 (1991).Google Scholar
3. Street, R.A., Biegelsen, D.K. and Knights, J.C., Phys. Rev. B 24, 969 (1981).Google Scholar
4. Jackson, W.B. and Amer, N.M., Phys. Rev. B 5, 5559 (1982); Gaughan, K., Nitta, S., Viner, J.M., Hautala, J. and Taylor, P.C., Appl. Phys. Lett. 57, 2121 (1990).Google Scholar
5. Lang, D.V., Cohen, J.D. and Harbison, J.P., Phys. Rev. B 25, 5285 (1982).Google Scholar
6. Wronski, C.R., Abels, B., Tiedge, T. and Cody, G.D., Solid State Commun. 44, 1423 (1982).Google Scholar
7. Street, R.A., Phys. Rev. Lett. 49, 1187 (1982).Google Scholar
8. Mott, N. F., Adv. Phys. 16, 49 (1967).Google Scholar
9. Street, R.A., Biegelsen, D.K., Jackson, W.B., Johnson, N.M. and Stutzmann, M., Philos. Mag. B52, 235 (1985); Mannsperger, H., Kalbitzer, S. and Muller, G., Appl. Phys. A 41, 253 (1986).Google Scholar
10. Stutzmann, M., Biegelsen, D.K. and Street, R.A., Phys Rev. B 35, 5666 (1987).Google Scholar
11. Wu, Z. and Shen, Y., Solar Energy Mat. 11, 273 (1984).Google Scholar
12. Gaughan, K., Hershgold, S., Viner, J.M. and Taylor, P.C., in Amorphous Silicon Technology-1991, ed. by Maden, A., Hamakawa, Y., Thompson, M.J., Taylor, P.C. and LeComber, P.G. (Materials Research Society, Pittsburgh 1991), Vol. 219, p. 697.Google Scholar
13. Amer, N.M. and Jackson, W. B., in Semiconductors and Semimetals, ed. by Pankove, J.I. (Academic, New York, 1984), Vol. 297b, p.83.Google Scholar
14. Fisher, R., Rehm, W., Stuke, J., Voget-Grote, U., J. Non-Cryst. Solids, 35&36, 687 (1980).Google Scholar
15. Bullot, J. and Schimidt, M., Phys. Stat. Sol. (b) 143, 345 (1987); Tran, N.T., Olsen, D.J., Patel, R.I. and Epstein, K.A., in Materials Issues in Amorphous-Seimconductor Technology, ed. by Adler, D., Hamakawa, Y. and Madan, A. (Materials Research Society, Pittsburgh, 1986), p. 325.Google Scholar