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Doping Efficiency and Deep Traps in MOCVD-Grown InGaAlP as Influenced by Stoichiometry and Hydrogen Passivation

  • V.A. Gorbylev (a1), A.A. Chelniy (a1), A.A. Chekalin (a1), A.Y. Polyakov (a2), S.J. Peaon (a3), N.B. Smirnov (a2), A.V. Govorkov (a2), B.M. Leiferov (a2), E.V. Popova (a2), V.A. Kusikov (a2) and A.A. Balmashnov (a4)...

Abstract

It is shown that the low electrical activity of Zn in MOCVDgrown InGaAlP is related to hydrogen passivation during growth and that the effect is sensitive to growth conditions. We also discuss the results of hydrogen plasma treatment of p- and n-InGaAlP layers.

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Doping Efficiency and Deep Traps in MOCVD-Grown InGaAlP as Influenced by Stoichiometry and Hydrogen Passivation

  • V.A. Gorbylev (a1), A.A. Chelniy (a1), A.A. Chekalin (a1), A.Y. Polyakov (a2), S.J. Peaon (a3), N.B. Smirnov (a2), A.V. Govorkov (a2), B.M. Leiferov (a2), E.V. Popova (a2), V.A. Kusikov (a2) and A.A. Balmashnov (a4)...

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