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Doping Efficiency and Deep Traps in MOCVD-Grown InGaAlP as Influenced by Stoichiometry and Hydrogen Passivation

Published online by Cambridge University Press:  22 February 2011

V.A. Gorbylev ,
A.A. Chelniy ,
A.A. Chekalin ,
A.Y. Polyakov ,
S.J. Peaon ,
N.B. Smirnov ,
A.V. Govorkov ,
B.M. Leiferov ,
E.V. Popova  and
V.A. Kusikov
...Show all authors
V.A. Gorbylev
Affiliation:
Sigma Plus Company, Vinogradov str. 8/75, Moscow, 117133, Russia
A.A. Chelniy
Affiliation:
Sigma Plus Company, Vinogradov str. 8/75, Moscow, 117133, Russia
A.A. Chekalin
Affiliation:
Sigma Plus Company, Vinogradov str. 8/75, Moscow, 117133, Russia
A.Y. Polyakov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
S.J. Peaon
Affiliation:
Materials Science Department, University of Florida, 132 Rhines Hall, Gainsville, Florida, Fl 32611, USA
N.B. Smirnov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
A.V. Govorkov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
B.M. Leiferov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
E.V. Popova
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
V.A. Kusikov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
A.A. Balmashnov
Affiliation:
Russian Friendship University, Miklukho-Maklay str. 6, Moscow, 117198, Russia
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Abstract

It is shown that the low electrical activity of Zn in MOCVDgrown InGaAlP is related to hydrogen passivation during growth and that the effect is sensitive to growth conditions. We also discuss the results of hydrogen plasma treatment of p- and n-InGaAlP layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 301
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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