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Dopants in nanoscale ZnO

Published online by Cambridge University Press:  31 January 2011

Matt McCluskey
Affiliation:
mattmcc@wsu.edu, Washington State University, Dept. of Physics and Astronomy, Washington State University, Pullman, Washington, 99164-2814, United States, 5093355356
Win Maw Hlaing Oo
Affiliation:
winmaw@wsu.edu, Washinton State University, Pullman, Washington, United States
Samuel Teklemichael
Affiliation:
samm@wsu.edu, Washington State University, Pullman, Washington, United States
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Abstract

Zinc oxide (ZnO) is a metal-oxide semiconductor that has attracted resurgent interest as an electronic material for a range of device applications. In our work, we have focused on how defect properties change as one goes from the bulk to the nanoscale. Infrared (IR) reflectance spectra of as-grown and hydrogen-annealed ZnO nanoparticles were measured at near-normal incidence. The as-grown particles were electrically semi-insulating, and show reflectance spectra characteristic of insulating ionic crystals. Samples annealed in hydrogen showed a significant increase in electrical conductivity and free-carrier absorption. A difference was observed in the reststrahlen line shape of the conductive sample compared to that of the as-grown sample. In addition to hydrogen doping, we successfully doped ZnO nanoparticles with Cu. To probe the electronic transitions of Cu2+ impurities in ZnO nanoparticles, IR transmission spectra were taken at liquid-helium temperatures. Two absorption peaks were observed at energies of 5781 and 5821 cm-1. Finally, we tentatively assign a series of IR spectral lines to Na acceptors.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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