Hostname: page-component-84b7d79bbc-lrf7s Total loading time: 0 Render date: 2024-07-27T18:26:48.351Z Has data issue: false hasContentIssue false
  • English
  • Français

Dopants in HgCdTe

Published online by Cambridge University Press:  10 February 2011

M. A. Berding  and
A. Sher
M. A. Berding
Affiliation:
Applied Physical Sciences Laboratory, SRI International, 333 Ravenswood Ave., Menlo Park, CA 94025, marcy@plato.sri.com
A. Sher
Affiliation:
Applied Physical Sciences Laboratory, SRI International, 333 Ravenswood Ave., Menlo Park, CA 94025, marcy@plato.sri.com
Get access

Abstract

In this paper we discuss our ab initio calculations of native point defect and impurity densities in HgCdTe. Our calculations have explained the experimental finding in general, and in particular have explained the in-active incorporation of the group VII elements under mercury-deficient conditions; have shown that the group I elements have a large fraction of interstitial incorporation, thereby explaining their fast diffusion; and have described a microscopic mechanism for the amphoteric behavior of the group V elements. We discuss the trends found among the compounds in terms of the underlying bond strengths to understand why the various elements behave the way they do.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 341
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Long, D. and Schmit, J. L., in Semimetals and Sernimetals, Vol.5, Edited by Willardson, R. K. and Beer, A. C., Academic Press, NY, 1970, p. 175.Google Scholar
2. Vydyanath, H. R., J. Electrochem. Soc. 128, p. 2609 (1981).Google Scholar
3. Pefliciari, B., Prog. Crystal Growth and Charact. 29, p. 1 (1994).Google Scholar
4. Kalisher, M. H., Herning, P. E., and Tung, T., Prog. Crystal Growth and Charact. 29, p. 41 (1994).Google Scholar
5. See for example, Arias, J. M., Properties of Narrow Gap Cadmium-Based Compounds, EMIS Datareviews Series No. 10, Edited by Capper, P., INSPEC, 1994, p. 30.Google Scholar
6. See for example, Irvine, A. J. C., ibid., p. 24.Google Scholar
7. Tung, T., Kalisher, M. H., Stevens, A. P., and Herning, P. E., Mater. Res. Soc. Symp. 90, p. 321 (1987).Google Scholar
8. Colombo, L., Westphal, G. H., Liao, P. K., Chen, M. C., and Schaake, H. F., Proc. SPIE (USA) 1683, p. 33 (1992).Google Scholar
9. Wijewarnasuriya, P. S., Lange, M. D., Sivanathan, S., and Faurie, J. P., J. Electron. Mater. 24, p. 5 (1995).Google Scholar
10. Mitra, P., Schimert, T. R., Case, F. C., Barnes, S. L., Reine, M. B., Starr, R., Weiler, M. H., and Kestigian, M., J. Electron. Mater. 24, 1077 (1995).Google Scholar
11. Capper, P., in Properties of Narrow Gap Cadmium-Based Compounds, EMIS Datareviews Series No. 10, Edited by Capper, P., INSPEC, 1994, p. 158 and p. 163, and references within.Google Scholar
12. Chandra, D., Goodwin, M. W., Chen, M. C., and Dodge, J. A., J. Electron. Mater. 22, p. 1033 (1993).Google Scholar
13. Vydyanath, H. R., Semicond. Sci. Technol. 5, p. S213 (1990).Google Scholar
14. Vydyanath, H. R., Lichtmann, L. S., Sivanathan, S., Wijewarnasuriya, P. S. and Faurie, J. P., J. Electron. Mater. 24, p. 625 (1995).Google Scholar
15. Berding, M. A., van Schilfgaarde, M., and Sher, A., Phys. Rev. B. 50, p. 1590 (1994).Google Scholar
16. Andersen, O. K., Jepsen, O., and Glotzel, D., Highlights of Condensed Matter Theory, Edited by Bassani, F. et al. Amsterdam, The Netherlands: North Holland, 1985, p. 59.Google Scholar
17. Langreth, and Mehl, D., Phys. Rev. B 28, p. 809 (1983).Google Scholar
18. Hansen, G. L., Schmit, J. L., and Casselman, T. N., J. Appl. Phys. 53, p. 7099 (1982).Google Scholar
19. Vydyanath, H. R. and Kröger, F. A., J. Electron. Mater. 11, p. 111 (1982).Google Scholar
20. Berding, M. A., van Schilfgaarde, M., and Sher, A., J. Electron. Mater. 26, p. 625 (1997).Google Scholar
21. Berding, M. A., presented at The 1997 U. S. Workshop on the Physics and Chemistry of II–VI Materials, October 21–23, 1997, Santa Barbara, CA.Google Scholar