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Dopant Incorporation in Silicon During Nonequilibrium Solidification: Comparison of Two Processes1

Published online by Cambridge University Press:  25 February 2011

E.P. Fogarassy ,
D.H. Lowndes ,
J. Narayan  and
C.W. White
E.P. Fogarassy
Affiliation:
Guest scientist from the Centre National de la Recherche Scientifique, Strasbourg, 67037, FRANCE
D.H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
J. Narayan
Affiliation:
On sabbatical at the Microelectronics Center of North Carolina, Research Triangle Park, NC 27709 and the Materials Engineering Department, North Carolina State University, Raleigh, NC 27650.
C.W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

The incorporation properties of implanted or deposited Sb into the silicon lattice during laser irradiation with a UV laser has been studied. For both implanted or deposited Sb, we find a maximum substitutional concentration of 2.1 × 1021/cm3 following laser melting and solidification at V ; 6 m/sec. In both cases, substitutional solubility is limited by inter-facial instabilities which develop during regrowth. For the deposited case we observe in addition a much larger cellular microstructure which may result from convection induced instabilities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 419
Copyright
Copyright © Materials Research Society 1985

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Footnotes

*

Research sponsored by the Division of Materials Sciences, USDOE under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.

References

REFERENCES

1. See for example, Laser Annealing of Semiconductors, ed. by Poate, J. M. and Mayer, James W., Academic Press, New York (1982).Google Scholar
2. White, C. W., Wilson, S.R., Appleton, B.R., and Young, F.W. Jr., J. Appl. Phys. 51, 738 (1980).Google Scholar
3. White, C.W., J. de Physique T44, 145 (1983).Google Scholar
4. Fogarassy, E., Stuck, R., Grob, J. J. A., and Siffert, P., Laser and Electron Beam Processing of Material, ed. by White, C.W., and Peercy, P.S., Academic Press, New York (1980) p. 117.Google Scholar
5. Fogarassy, E., Stuck, R., Toulemonde, M., Salles, D., and Siffert, P., J. Appl. Phys. 54, 5059 (1983).Google Scholar
6. Trumbore, F., Bell Syst. Tech. J. 39, 205 (1960).Google Scholar
7. Auston, D.H., Surko, C.M., Venkatesan, T. N. C., Slusher, R.E., and Golovchenko, J.A., Appl. Phys. Lett. 33(5) 437 (1978).Google Scholar
8. Narayan, J., Naramoto, H., and White, C.W., J. Appl. Phys. 53, 912 (1983).Google Scholar
9. Narayan, J., J. Appl. Phys. 52, 1283 (1981).Google Scholar
10. Mullins, W.W. and Sekerka, R.F., J. Appl. Phys. 35, 444 (1964).Google Scholar
11. Aziz, M., private communication.Google Scholar
12. van Gurp, G. J., Eggermont, G. E. J., Tamminga, Y., Stacy, W.T., and Gijsbers, J. R. M., Appl. Phys. Lett. 35, 273 (1979).Google Scholar
13. Possin, G.E., Parks, H.G., and Chiang, S.W., P. 73 in Ref. 7.Google Scholar