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Dopant incorporation efficiencies of SiC crystals grown on {1100}-face

Published online by Cambridge University Press:  15 February 2011

Naohiro Sugiyama ,
Atsuto Okamoto ,
Toshihiko Tani  and
Nobuo Kamiya
Naohiro Sugiyama
Affiliation:
Toyota Central Research & Development Laboratories, Inc. Nagakute Aichi, 480–11, Japan, e0881@mosk.tytlabs.co.jp
Atsuto Okamoto
Affiliation:
Toyota Central Research & Development Laboratories, Inc. Nagakute Aichi, 480–11, Japan, e0881@mosk.tytlabs.co.jp
Toshihiko Tani
Affiliation:
Toyota Central Research & Development Laboratories, Inc. Nagakute Aichi, 480–11, Japan, e0881@mosk.tytlabs.co.jp
Nobuo Kamiya
Affiliation:
Toyota Central Research & Development Laboratories, Inc. Nagakute Aichi, 480–11, Japan, e0881@mosk.tytlabs.co.jp
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Abstract

The dopant incorporation efficiencies of SiC bulk single crystals were investigated by the measurement of optical absorption coefficients and chemical analysis by Glow Discharge Mass Spectroscopy. The SiC crystals were grown on the seed with the {1100} face by a sublimation method. The grown ingot consisted of approximately three parts, which were the regions grown with the {1100} face (I), the {110n} face (II) and the {110n} face (III) as a growing front. The nitrogen concentrations in these parts were in the order of II>I>III. The wafers exhibited the color distributions in the c-plane due to the difference of the growing facet. The nitrogen incorporation efficiencies were discussed in terms of atomic structure on the surface. The aluminum concentration in the crystal grown on a {1100}-faced seed was in the medium between those in crystals grown on Si-face and C-face. On the other hand, the boron concentration was similar to that of Si-face grown crystal, and higher than that of C-face grown crystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 583
Copyright
Copyright © Materials Research Society 1996

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References

1. Bhatnagar, M. and Baliga, B. J., IEEE Trans. Electron Devices 40, 645 (1993)Google Scholar
2. Tairov, Y. M. and Tsvetkov, V. F., J. Cryst. Growth 43, 209 (1978)Google Scholar
3. Jr., C. H. Carter and Tsvetkov, V. F., the 6th International Conf. on Silicon Carbide and Related Mareials (Kyoto) Techenical Digest (1995) p. 11 Google Scholar
4. Takahashi, J., Kanaya, M. and Fujiwara, Y., J. Cryst. Growth 135, 61 (1994)Google Scholar
5. Sugiyama, N., Okamoto, A. and Tani, T., the 6th International Conf. on Silicon Carbide and Related Materials (Kyoto) Techenical Digest (1995) p. 22 Google Scholar
6. Biedermann, E. Solid State Comm. 3, 343, (1965)Google Scholar
7. Yang, J., Nishino, S., Mehragany, M. and Pirouz, P., Inst. Phys. Conf. Ser. No.137, Silicon Carbide and Related Materials, (lOP, 1994) p. 17 Google Scholar
8. Jr., J. A. Freitas, Carlos, W. E. and Bishop, S. G., “Amorphous and Crystalline Silicon Carbide III”, (Springer, 1990) p. 13 5Google Scholar