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Dopant and Strain Dependence of Extended Defect Generation in Silicon by 1-MeV Electron Irradiation

Published online by Cambridge University Press:  25 February 2011

Jan Vanhellemont  and
Albert Romano-Rodriguez
Jan Vanhellemont
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
Albert Romano-Rodriguez
Affiliation:
LCMM, Departament de Física Aplicada i Electrónica, Universitat de Barcelona, Diagonal 647, E-08028 Barcelona, Spain.
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Abstract

Results are presented of an in-situ study of 1-MeV electron irradiation induced {113}-defect generation in silicon with boron, phosphorus or arsenic doped surface layers. By 1-MeV electron irradiation in a high voltage transmission electron microscope, {113}-defects are dorni-nandy formed in areas with a well defined dopant concentration range which depends on the tjpe of dopant atom, the irradiation temperature and fluence and the sample thickness. The observations for samples with boron and phosphorus concentration profiles are compared with published data on electron irradiation induced ( 113}-defect formation in uniformly doped silicon. In the present paper first results on heavily arsenic doped silicon are presented. It is shown that ihe observed dopant dependence of the {113}-defect generation can be understood on the basis of known point defect reactions. A few irradiation experiments are also performed on a local isolation structure illustrating for the first time the influence of localised tensile and compressive strain fields on {113} -defect nucleation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 61
Copyright
Copyright © Materials Research Society 1993

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References

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