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Dopant Activation During Solid Phase Crystallization of Poly-Si and Influence of Fluorine and Hydrogen

Published online by Cambridge University Press:  15 February 2011

A. Kaan Kalkan ,
Reece M. Kingi  and
Stephen J. Fonash
A. Kaan Kalkan
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Reece M. Kingi
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Stephen J. Fonash
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

Dopant activation for ion implanted solid phase crystallized (SPC) a-Si:H films, deposited by low temperature PECVD, was investigated. The impact of film thickness, the effect of subsequent hydrogenation, and a possible role for fluorine in this process have been studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 415
Copyright
Copyright © Materials Research Society 1997

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References

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