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Domain Wall Contributions to the Piezoelectric Properties of Ferroelectric Ceramics and Thin Films, and Their Significance in Sensor and Actuator Applications

Published online by Cambridge University Press:  10 February 2011

D. Damjanovic
Affiliation:
Laboratory of Ceramics, Department of Materials, Swiss Federal Institute of Technology-EPFL, 1015 Lausanne, Switzerland
D. V. Taylor
Affiliation:
Laboratory of Ceramics, Department of Materials, Swiss Federal Institute of Technology-EPFL, 1015 Lausanne, Switzerland
A. L. Kholkin
Affiliation:
Laboratory of Ceramics, Department of Materials, Swiss Federal Institute of Technology-EPFL, 1015 Lausanne, Switzerland
M. Demartin
Affiliation:
Laboratory of Ceramics, Department of Materials, Swiss Federal Institute of Technology-EPFL, 1015 Lausanne, Switzerland
K. G. Brooks
Affiliation:
Laboratory of Ceramics, Department of Materials, Swiss Federal Institute of Technology-EPFL, 1015 Lausanne, Switzerland
N. Setter
Affiliation:
Laboratory of Ceramics, Department of Materials, Swiss Federal Institute of Technology-EPFL, 1015 Lausanne, Switzerland
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Abstract

The piezoelectric and dielectric properties of ferroelectric thin films and ceramics were investigated in detail as a function of the frequency and amplitude of the driving field. A description, which is based on the theories of domain wall pinning by randomly distributed imperfections in magnetic materials, is used to interpret the electromechanical behaviour of several ferroelectric bulk ceramic and thin film compositions. With this approach, it is possible to make quantitative estimates of the domain wall contributions to the electromechanical properties of ferroelectric sensors and actuators.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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