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Dlts-Studies on the “New Oxygen Donor” in Heat Treated and Hydrogenated CZ-Grown SI

  • Karlheinz Hölzlein (a1), G. Pensl (a1), M. Schulz (a1) and N. M. Johnson (a2)

Abstract

Cz-grown Si samples containing a high concentration of oxygen are investigated after various processing steps by DLTS. Heat treatments ranging from 500°C–1000°C are performed to study the formation and annihilation of the “New Oxygen Donor” (ND) traps. Hydrogenation at low temperature leads to a reduction of the ND trap states. The experimental results confirm the “SiOx Interface Model” which assumes two differing types of interfacerelated states.

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12. Hblzlein, K., Pensl, G., Schulz, M., Johnson, N.M., to be published

Dlts-Studies on the “New Oxygen Donor” in Heat Treated and Hydrogenated CZ-Grown SI

  • Karlheinz Hölzlein (a1), G. Pensl (a1), M. Schulz (a1) and N. M. Johnson (a2)

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