Skip to main content Accessibility help

DLTS study of 3C-SiC grown on Si using hexamethyldisilane

  • M. Kato (a1), M. Ichimura (a1), E. Arai (a1), Y. Masuda (a2), Y. Chen (a2), S. Nishino (a2) and Y. Tokuda (a3)...


n-type 3C-SiC was heteroepitaxially grown on n-type Si(100) substrates using HMDS (hexamethyldisilane) and characterized by DLTS (deep level transient spectroscopy) measurements. In order to investigate relationship of defect density with epilayer thickness, epilayers with various thicknesses were grown. Relatively thin (<1.0μm thick) epilayers were found to contain defects with energy levels distributed in a wide energy range, while relatively thick (>2.2μm thick) epilayers contain a defect with an activation energy of 0.25eV. This defect level is slightly shallower than that in 3C-SiC grown by SiH4 and C3H8 (∼0.3eV).



Hide All
[1] Masuda, Y., Chen, Y., Matsuura, H., Harima, H. and Nishino, S., Extended Abstracts of International Conference on Silicon Carbide and Related Materials, North Carolina, (1999) abs. No.119.
[2] Zhou, P., Spencer, M. G., Harris, G. L. and Fekade, K., Appl. Phys. Lett., 50, 1384 (1987).
[3] Zekentes, K., Kayiambaki, M. and Constantindis, G., Appl. Phys. Lett., 66, 3015 (1995).
[4] Nagesh, V., Farmer, J. W., Davis, R. F. and Kong, H. S., Appl. Phys. Lett., 50, 1138 (1987).
[5] Yamada, N., Kato, M., Ichimura, M., Arai, E. and Tokuda, Y., Jpn. J. Appl. Phys. Lett., 38, L1094 (1999).
[6] Tokuda, Y., Shimizu, N. and Usami, A., Jpn. J. Appl. Phys., 18, 309 (1979)
[7] Shibahara, K., Nishino, S. and Matsunami, H., J. Crystal Growth, 78, 538 (1986).
[8] Choyke, W. J., Feng, Z. C. and Powell, J. A., J. Appl. Phys., 64, 3163 (1988).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed