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DLTS studies of defects produced in n-type silicon by hydrogen implantation at low temperature

Published online by Cambridge University Press:  11 February 2011

Takahide Sugiyama ,
Masayasu Ishiko ,
Shigeki Kanazawa  and
Yutaka Tokuda
Takahide Sugiyama
Affiliation:
Toyota Central R&D Labs., Inc., Nagakute, Aichi 480–1192, Japan
Masayasu Ishiko
Affiliation:
Toyota Central R&D Labs., Inc., Nagakute, Aichi 480–1192, Japan
Shigeki Kanazawa
Affiliation:
Department of Electronics, Aichi Institute of Technology, Toyota 470–0392, Japan
Yutaka Tokuda
Affiliation:
Department of Electronics, Aichi Institute of Technology, Toyota 470–0392, Japan
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Abstract

Metastable defects are discovered in hydrogen-implanted n-type silicon. Hydrogen implantation was performed with the energy of 80 keV to a dose of 2×10 cm- at 109 K. After implantation, the sample temperature was raised to room temperature. DLTS measurements were carried out in the temperature range 80–290 K for fabricated diodes. When the sample is reverse-biased at 10V for 10 min at room temperature and then is cooled down to 80 K, three new peaks labeled EM1, EM2 and EM3 appear around 150, 190 and 240 K, respectively. The introduction of metastable defects is found to be characteristic of low temperature implantation. We have evaluated properties of EM1 in detail. EM1 with thermal emission activation energy of 0.29 eV has a peak in concentration around the depth of 0.64 μ m, which corresponds to the projected range of 80 keV hydrogen. EM1 is regenerated with the reverse bias applied around 270 K and is removed with the zero bias around 220 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.49
Copyright
Copyright © Materials Research Society 2003

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