Skip to main content Accessibility help
×
Home

dLow Temperature of formation of Nickel Germanide by reaction of Nickel and Crystalline Germanium

  • Fahid Algahtani (a1), Patrick W Leech (a1), Geoffrey K Reeves (a1), Anthony S Holland (a1), Mark Blackford (a2), Gordon Thorogood (a2), Jeffrey C McCallum (a3) and Brett C Johnson (a3)...

Abstract

The formation of nickel germanide has been examined over a range of low temperatures (200-400 °C) in an attempt to minimize the thermal budget for the process. Cross-sectional Transmission Electron Microscopy (TEM) was used to determine the texture of the germanide layer and the morphology and constituent composition of the Ge/NiGe interface. The onset and completion of reaction between Ni and Ge were identified by means of a heated stage in combination with in-situ x-ray diffraction (XRD) measurements. The stages of reaction were also monitored using measurements of sheet resistance of the germanides by the Van der Pauw technique. The results have shown that the minimum temperature for the initiation of reaction of Ni and Ge to form NiGe was 225 °C. However, an annealing temperature > 275 °C was necessary for the extensive (and practical) formation of NiGe. Between 200 and 300 °C, the duration of annealing required for the formation of NiGe was significantly longer than at higher temperatures. The stoichiometry of the germanide was very close to NiGe (1:1) as determined using energy dispersive spectroscopy (EDS).

Copyright

References

Hide All
1. Claeys, C. and Simoen, E., Germanium-based Technologies from Materials to Devices (Elsevier, New York, 2007).
2. Yang, B., Jason Lin, J.-Y., Gupta, S., Roy, A., Liang, S., Maszara, W. P., Nishi, Y. and Saraswat, K. in Si-Ge Technology and Device Meeting (ISTDM), 88 (2012).
3. Leiten, R. R. et al. ., Appl. Phys. Lett., 92, 022106 (2008).
4. Gaudet, S., Detavernier, C., Kellock, A. J., Desjardins, P. and Lavoie, C., J Vac Sci Tech A24, 474 (2006).
5. Nemouchi, F., Mangelinck, D., Bergman, C., Clugnet, G., Gas, P., Lábár, J.L, Appl.Phys.Lett. 89 131920 (2006).
6. Spann, J. Y., Anderson, R. A., Thornton, T. J., Harris, G., Thomas, S. G. and Tracy, C., Elect Device Lett, 26 (3), 151 (2005).

Keywords

dLow Temperature of formation of Nickel Germanide by reaction of Nickel and Crystalline Germanium

  • Fahid Algahtani (a1), Patrick W Leech (a1), Geoffrey K Reeves (a1), Anthony S Holland (a1), Mark Blackford (a2), Gordon Thorogood (a2), Jeffrey C McCallum (a3) and Brett C Johnson (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed