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Distribution of Misfit Dislocations In SiGe on Si Measured with Synchrotron-Radiation Topography

Published online by Cambridge University Press:  25 February 2011

Ma. Capano ,
L.W. Hobbs ,
L. Hart ,
D. Gordon-Smith ,
D.K. Bowen  and
C.R. Thomas
L.W. Hobbs
Affiliation:
Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, MA 02139
L. Hart
Affiliation:
University of Warwick, Department of Engineering, Coventry, United Kingdom
D. Gordon-Smith
Affiliation:
University of Warwick, Department of Engineering, Coventry, United Kingdom
D.K. Bowen
Affiliation:
University of Warwick, Department of Engineering, Coventry, United Kingdom
C.R. Thomas
Affiliation:
University of Warwick, Department of Engineering, Coventry, United Kingdom
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Abstract

The lattice relaxation of strained Si1-xGex layers on Si (001) substrates has been examined. Single layers having a nominal composition of x = 0.14 were grown by Molecular Beam Epitaxy to thicknesses of 0.5, 1.0 and 1.5 μm, all of which are greater than the critical thickness where misfit-dislocation generation commences. Double-crystal and white-radiation topographic methods were used to reveal the misfit dislocation structure and distribution. The misfit dislocations were shown to extend from heterogeneous nucleation sites along the four available <110> directions in the plane of the interface. A symmetric distribution of dislocations between the orthogonal < 110> directions was observed. Secondary branching of the misfit dislocations was also observed which accelerates the relaxation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 363
Copyright
Copyright © Materials Research Society 1991

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References

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