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Distinct Magnesium Incorporation Behavior in Laterally Grown AlGaN

Published online by Cambridge University Press:  11 February 2011

R. Liu ,
A. Bell ,
F. A. Ponce ,
D. Cherns ,
H. Amano  and
I. Akasaki
R. Liu
Affiliation:
Dept. Physics and Astronomy, Arizona State University, Tempe, AZ, 85287–1504
A. Bell
Affiliation:
Dept. Physics and Astronomy, Arizona State University, Tempe, AZ, 85287–1504
F. A. Ponce
Affiliation:
Dept. Physics and Astronomy, Arizona State University, Tempe, AZ, 85287–1504
D. Cherns
Affiliation:
H. H. Wills Physics Laboratory, Bristol, BS8 1TL, UK
H. Amano
Affiliation:
Dept. of Materials Science and Engineering, Meijo University, Nagoya 468, Japan
I. Akasaki
Affiliation:
Dept. of Materials Science and Engineering, Meijo University, Nagoya 468, Japan
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Abstract

Different magnesium incorporation behavior has been observed in heavily Mg-doped AlGaN epitaxial layers. The films were grown by metal-organic vapor phase epitaxy involving a lateral overgrowth technique on patterned sapphire substrates. TEM observations show that direct growth on sapphire exhibits pyramidal defects, while lateral overgrowth is homogeneous and free of structural defects. The orientation of the growth front significantly influences the microstructure, and the {0001} growth facet appears to be essential for the formation of the pyramidal defects. In addition, cylindrical and funnel-shaped nanopipes have been observed at dislocations with an edge component. The relationship between Mg segregation and these defects is discussed, and formation mechanisms are proposed taking into consideration the orientation of the growth front.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L1.11
Copyright
Copyright © Materials Research Society 2003

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References

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