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Dislocations as Sinks for Self-Interstitials in Gold Doped Float Zone Silicon

Published online by Cambridge University Press:  03 September 2012

G. Mariani ,
B. Pichaud ,
W. J. Taylor  and
W. -S. Yang
G. Mariani
Affiliation:
Laboratoire de Physique Cristalline, U.A. 797 C.N.R.S., Univ. Aix-Marseille III, 13397 Marseille Cedex 13, France
B. Pichaud
Affiliation:
Laboratoire de Physique Cristalline, U.A. 797 C.N.R.S., Univ. Aix-Marseille III, 13397 Marseille Cedex 13, France
W. J. Taylor
Affiliation:
Dept. of Mechanical Engineering and Materials Science, Duke Univ., Durham NC 27706
W. -S. Yang
Affiliation:
Dept. of Mechanical Engineering and Materials Science, Duke Univ., Durham NC 27706
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Abstract

Self-interstitial sink efficiencies of dislocations γ were measured in gold doped FZ (111) and (100) samples, we found respectively γ=0.4–0.5 and γ=0.2–0.3. γ is probably sensitive to dislocation character and to the deformation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 81
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Leroy, B., Instabilities in silicon devices: silicon passivation and related instabilities, (North-Holland, 1986), p. 202 Google Scholar
2. Wilcox, N. R. and Lachapelle, T. J., Appl. Phys., 35, 240 (1964)Google Scholar
3. Gösele, U., Frank, W. and Seeger, A., Appl. Phys., 23, 361 (1980)Google Scholar
4. Stolwijk, N. A., Schuster, B. and Hölzl, J., Appl. Phys. A, 33, 133 (1984)CrossRefGoogle Scholar
5. Haubert, J., Stolwijk, N. A., Tapfer, L., Mehrer, H. and Frank, W., J. Phys. C Solid State Phys., 19, 5817 (1986)CrossRefGoogle Scholar
6. Stolwijk, N. A. and Hölzl, J. in Impurity Diffusion and Gettering in Silicon, edited by Fair, R.B., Pearce, C.W. and Washburn, J. (Mater. Res. Soc. Proc., 36, Pittsburgh, PA 1985) pp. 137–142 Google Scholar
7. Yang, W.-S., Taylor, W. J., Marioton, B. P. R. and Gösele, U., in Polycristalline Semiconductors II, edited by Werner, J.W. and Strunk, H.P. (Springer-Verlag Publishers, Berlin 1991), pp. 236–241 CrossRefGoogle Scholar
8. Kästner, S. and Hesse, J., Phys. Stat. Sol (a), 25, 261 (1974)Google Scholar
9. Shockley, W. and Last, J. L., Phys. Rev., 107, 392 (1957)CrossRefGoogle Scholar
10. Stolwijk, N. A., Hölzl, J., Frank, W., Weber, E.R. and Mehrer, H., Appl. Phys. A, 39, 37 (1986)Google Scholar
11. Wessel, K. and Alexander, H., Phil. Mag., 35, 1523 (1977)CrossRefGoogle Scholar