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Dislocations as Sinks for Self-Interstitials in Gold Doped Float Zone Silicon

  • G. Mariani (a1), B. Pichaud (a1), W. J. Taylor (a2) and W. -S. Yang (a2)

Abstract

Self-interstitial sink efficiencies of dislocations γ were measured in gold doped FZ (111) and (100) samples, we found respectively γ=0.4–0.5 and γ=0.2–0.3. γ is probably sensitive to dislocation character and to the deformation process.

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Dislocations as Sinks for Self-Interstitials in Gold Doped Float Zone Silicon

  • G. Mariani (a1), B. Pichaud (a1), W. J. Taylor (a2) and W. -S. Yang (a2)

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