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Dislocations and Bubbles in BF+ 2 Implanted Silicon

  • G. E. Pike (a1), M. J. Carr (a1), W. K. Schubert (a1), C. R. Hills (a1), G. C. Nelson (a1) and P. J. Mcwhorter (a1)...

Abstract

Defects in crystalline silicon caused by a BF+ 2 ion implantation dose of 3x1015cm-2 have been studied using plan-view and cross-section TEM and SIMS. Dislocations form at annealing temperatures above 1000ºC and are pinned below the Si surface by fluorine bubbles ∼10 nm diameter at a density of ∼1011cm-2. This microstructure is essentially stable at 1150ºC from 4 to 400 minutes.

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Dislocations and Bubbles in BF+ 2 Implanted Silicon

  • G. E. Pike (a1), M. J. Carr (a1), W. K. Schubert (a1), C. R. Hills (a1), G. C. Nelson (a1) and P. J. Mcwhorter (a1)...

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