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Dislocation-Related Etch Protrusions Formed on 4H-SiC (000-1) Surfaces by Molten KOH Etching

  • Masahide Gotoh (a1), Takeshi Tawara (a2), Shun-ichi Nakamura (a3), Tae Tamori (a4), Yoshiyuki Kuboki (a5), Yoshiyuki Yonezawa (a6) and Masaharu Nishiura (a7)...

Abstract

In this study, we investigated surface features formed by molten KOH etching of (000-1) substrates and epilayers, using scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM). We found the surface features formed on (000-1) are protrusions, in contrast to well-known dimples on (0001).

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Keywords

Dislocation-Related Etch Protrusions Formed on 4H-SiC (000-1) Surfaces by Molten KOH Etching

  • Masahide Gotoh (a1), Takeshi Tawara (a2), Shun-ichi Nakamura (a3), Tae Tamori (a4), Yoshiyuki Kuboki (a5), Yoshiyuki Yonezawa (a6) and Masaharu Nishiura (a7)...

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