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Dislocation-Induced Surface Strain on (001) Silicon-On-Insulator
Published online by Cambridge University Press: 10 February 2011
Abstract
We demonstrate a novel technique, based on low-energy electron microscopy, by which inhomogeneous uniaxial strain at the (001) surface of Si can be mapped quantitatively. Using this technique on silicon-on-insulator wafers, we determine the surface strain field induced by a single 60° dislocation and show that such extended defects can be used as monitors of heteroepitaxy-induced changes in the surface strain.
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- Copyright © Materials Research Society 1999