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Dislocation-Induced Surface Strain on (001) Silicon-On-Insulator

  • P. Sutter (a1) and M.G. Lagally (a1)

Abstract

We demonstrate a novel technique, based on low-energy electron microscopy, by which inhomogeneous uniaxial strain at the (001) surface of Si can be mapped quantitatively. Using this technique on silicon-on-insulator wafers, we determine the surface strain field induced by a single 60° dislocation and show that such extended defects can be used as monitors of heteroepitaxy-induced changes in the surface strain.

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[6] Sutter, P. and Lagally, M.G., Phys. Rev. Lett. 82, 1490 (1999).
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[11] The viscosity of the Si02/Si interface will ultimately limit the response of the thin Si slab and its ability to relax stress imposed by the growth of a lattice mismatched layer, i.e., growth on SO1 may differ significantly from growth on a free-standing thin Si slab.
[12] Krause, S., Anc, M., and Roitman, P., MRS Bulleting 23, 25 (1998).
[13] Mateeva, E., Sutter, P., and Lagally, M.G., to be published.
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[15] LEEM will allow etching the SOI samples, e.g. at elevated temperature in an atmosphere of molecular oxygen [Hannon, J.B., Bartelt, M.C., Bartelt, N.C., and Kellogg, G.L., Phys. Rev. Lett. 81, 4676 (1998)], while keeping an individual buried defect in the field of view. Thus, the detailed dependence of surface strain on separation from the underlying defect can be measured with this technique.
[16] Men, F.K., Packard, W.P., and Webb, M.B., Phys. Rev. Lett. 61, 2469 (1988); M.B. Webb, F.K. Men, B.S. Swartzentruber, R. Kariotis, and M.G. Lagally, Surf. Sci. 242, 23 (1991).
[17] Wu, F. and Lagally, M.G., Phys. Rev. Lett. 75, 2534 (1995).
[18] Direct observations of dislocation glide in our SOI samples by LEEM at high temperature support the conclusion that we see surface strain due to individual dislocations. Repeated annealing increases the dislocation density. The strain fields of close-lying dislocations can then overlap, creating stress distributions that are symmetric about an axis parallel to the line direction (see fig. 2a).
[19] Hirth, J.P. and Lothe, J., “Theory of Dislocations”, 2nd ed., Wiley (1982).
[20] The hatched part of the calculated exx profile appears to be an artifact resulting from the incorrect treatment of the free-surface boundary condition in our first-order calculation. A calculation of the surface strain field based on a complete solution of the image problem is currently in progress.
[21] The contrast mechanism in bright-field LEEM imaging of three-dimensional islands has been discussed in Sutter, P., Mateeva, E., Sullivan, J.S., and Lagally, M.G., Thin Solid Films 336, 262 (1998).
[22] Our observations indicate that the configuration of the underlying dislocations does not change during such growth experiments, i.e., we detect dynamic changes in the response of the surface to a constant strain field.
[23] Mo, Y.W. and Lagally, M.G., J. Cryst. Growth 111, 876 (1991); X.R. Qin, private communication.

Dislocation-Induced Surface Strain on (001) Silicon-On-Insulator

  • P. Sutter (a1) and M.G. Lagally (a1)

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