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Dislocation Trapping Potential Measured by SEM-CCM

  • Sam Mil'Shtein (a1)

Abstract

The intensity of contrast and width of the image of a single dislocation in silicon were measured versus bias of Schottky barrier at room temperature. A regime of measurements was established, which reduced dramatically the number of variable parameters involved in contrast formation. In addition, using the right regime of SEM-CCM one can determine the position of a defect relative to the surface of the specimen without doing TEM measurements. It was shown for the first time that from contrast readout one can determine the dislocation electrical potential. A model of image formation is discussed.

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1. Mil'shtein, S., Joy, D., Ferris, S. and Kimerling, K.. Phys. Stat. Solidi, A, 84, 363369, (1984).
2. Mil'shtein, S. and Joy, D., submitted.
3. Toth, S.. Proceedings of 4th Oxford Conference on Microscopy of Semiconducting Materials (to be published).
4. Ioannau, D. and Davidson, S.. Phys. Stat. Solidi, A, 48, K1–K4, (1978).
5. Ourmaszd, A. and Booker, G.. Phys. Stat. Solidi, A, 55, 771, (1979).
6. Mil'shtein, S. and Senderichin, A.. Phys. Stat. Solidi, B, 109, 429436, (1982).

Dislocation Trapping Potential Measured by SEM-CCM

  • Sam Mil'Shtein (a1)

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