Skip to main content Accessibility help
×
Home

Contents:

Information:

  • Access
  • Cited by 2

Actions:

      • Send article to Kindle

        To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

        Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

        Find out more about the Kindle Personal Document Service.

        Dislocation Mobilities in GaN from Molecular Dynamics Simulations– CORRIGENDUM
        Available formats
        ×

        Send article to Dropbox

        To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

        Dislocation Mobilities in GaN from Molecular Dynamics Simulations– CORRIGENDUM
        Available formats
        ×

        Send article to Google Drive

        To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

        Dislocation Mobilities in GaN from Molecular Dynamics Simulations– CORRIGENDUM
        Available formats
        ×
Export citation

doi: 10.1557/opl.2015.25, Published by Materials Research Society, 02 February 2015.

The original Figure 4 published in this paper is incorrect. Below is the correct figure, as well as updates to the surrounding text regarding this figure:

Page 3, in section “c-type edge dislocations”:

There are two slip systems for c-type dislocations, $\left\{ {\bar 1\bar 120} \right\}\left\langle {0001} \right\rangle$ and $\left\{ {1\bar 100} \right\}\left\langle {0001} \right\rangle$ .

Page 4:

Figure 4 - (a) The core structure of a $\left( {\bar 1\bar 120} \right)\left[ {0001} \right]$ c-type dislocation, (b) the same dislocation looking down on the glide plane, with crystallographic directions as indicated. (c) and (d) are the same for a $\left( {\bar 1100} \right)\left[ {0001} \right]$ c-type dislocation.

The author regrets this error.

Reference

Weingarten, N. Scott (2015). Dislocation Mobilities in GaN from Molecular Dynamics Simulations. MRS Proceedings, 1741, mrsf14-1741-aa01-03, doi:10.1557/opl.2015.25.