Dislocation Luminescence in Wurtzite GaN

Y. G. Shreter; Y. T. Rebane; T. J. Davis; J. Barnard; M. Darbyshire; J. W. Steeds; W. G. Perry; M. D. Bremser; R. F. Davis

doi:10.1557/PROC-449-683

Abstract

The 364 nm PL-system in GaN is attributed to the formation of dislocation excitons and charged dislocation excitons on c-axis screw dislocations. The binding energy for the dislocation exciton, charged dislocation exciton and a hole on the screw dislocation were determined as 35 meV, 7 meV and 65 meV respectively, in accord with experiment.

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Article contents

Dislocation Luminescence in Wurtzite GaN

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This article has been cited by the following publications. This list is generated based on data provided by Crossref.

Article contents

Dislocation Luminescence in Wurtzite GaN

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REFERENCES

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