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Dislocation Luminescence in Wurtzite GaN

  • Y. G. Shreter (a1), Y. T. Rebane (a1), T. J. Davis (a2), J. Barnard (a2), M. Darbyshire (a2), J. W. Steeds (a2), W. G. Perry (a3), M. D. Bremser (a3) and R. F. Davis (a3)...

Abstract

The 364 nm PL-system in GaN is attributed to the formation of dislocation excitons and charged dislocation excitons on c-axis screw dislocations. The binding energy for the dislocation exciton, charged dislocation exciton and a hole on the screw dislocation were determined as 35 meV, 7 meV and 65 meV respectively, in accord with experiment.

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Dislocation Luminescence in Wurtzite GaN

  • Y. G. Shreter (a1), Y. T. Rebane (a1), T. J. Davis (a2), J. Barnard (a2), M. Darbyshire (a2), J. W. Steeds (a2), W. G. Perry (a3), M. D. Bremser (a3) and R. F. Davis (a3)...

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