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Dislocation Dynamics in Ni3Al: Experiments and Computations

Published online by Cambridge University Press:  10 February 2011

N. Bhate
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
S. Kumar
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
R. Phillips
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
R. J. Clifton
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
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Abstract

A modified electrolytic etchant has been successfully used to observe dislocation etch-pits on {100} surfaces of single crystal Ni3AI containing Hf and B additions. Four-point bending tests have been used to obtain the dependence of dislocation velocity on resolved shear stress at room temperature. A comparison with earlier studies reveal that the rate of change of dislocation velocity with resolved shear stress, to a first approximation, is independent of alloying. Atomic level simulations have been performed using the embedded atom method (EAM) to study dislocation core structures and frictional stress in Ni3Al.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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