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Dislocation Climb in the Electron Wind

Published online by Cambridge University Press:  22 February 2011

Z. Suo
Z. Suo*
Affiliation:
Mechanical and Environmental Engineering Department and Materials Department, University of California, Santa Barbara, CA 93111
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Abstract

When a current flows in a conductor, the electron wind causes atoms to diffuse. This paper considers the consequences of such diffusion along dislocation cores. A dislocation climbing in a crystal is viewed as a non-equilibrium thermodynamic system to define the force that drives selfdiffusion along the core. Not only is a dislocation a mass-transport pipe, it also climbs and generates more dislocations—all in the electron wind. A prismatic loop moves like a rigid disk, as atoms electro-migrate along the core from one edge of the loop to the other. Each loop is therefore a mass carrier responding to an electric current. Interstitial and vacancy loops can be simultaneously generated and subsequently climb in the opposite directions. The process transports mass in single crystal or bamboo-like interconnects at moderate temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 379
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. d'Heurle, F.M., and Rosenberg, R., in Physics of Thin Films, Vol. 7, edited by Hass, G., Francombe, M. and Hoffman, R. (Academic Press, New York 1973) pp. 257–310.Google Scholar
2. d'Heurle, F.M. and Ho, P.S., in Thin Films: Interdiffusion and Reactions, edited by Poate, J., Tu, K.N. and Mayer, J. (John Wiley, New York, 1978) p. 243–303.Google Scholar
3. Ho, P.S. and Kwok, T., Rep. Prog. Phys. 52, 301 (1989).Google Scholar
4. Thompson, C.V. and Lloyd, J.R., MRS Bulletin, December Issue 1993, p. 19.Google Scholar
5. Suo, Z., Acta Metall. Mater. (in press)Google Scholar
6. Suo, Z., Wang, W. and Yang, M., Appl. Phys. Lett. 64 (15) (1994).Google Scholar
7. Yang, W., Wang, W. and Suo, Z., J. Mech. Phys. Solids (in press).Google Scholar
8. Rose, J.H., Lloyd, J.R., Shepela, A., and Riel, N., Proceedings of the 49th Annual Meeting of Electron Microscopy Society of America (G. W. Bailey, San Jose, 1991), p. 820.Google Scholar
9. Livesay, R.B., Donlin, N.E., Garrison, A.K., Harris, H.M., and Hubbard, J.L., IEEE/IRPS, 217 (1992).Google Scholar
10. Fiks, V.B., Sov. Phys. JETP, 53, 1209 (1981).Google Scholar
11. Struik, D.J., Lectures on Classical Differential Geometry, 2nd ed. Dover Publications, New York (1988).Google Scholar
12. Volin, T.E., Lie, K.H. and Balluffi, R.W., Acta Metall. 19, 263 (1971).Google Scholar
13. Hirth, J.P. and Lothe, J., Theory of Dislocations, Wiley & Sons, New York (1982).Google Scholar
14. Blech, I.A., and Herring, C., Appl. Phys. Lett. 29, 131 (1976).Google Scholar
15. Ma, Q. and Suo, Z., J. Appl. Phys. 74, 5457 (1993).Google Scholar
16. Suo, Z. and Wang, W., Submitted to J. Appl. Phys (1994).Google Scholar
17. Wang, W., Suo, Z. and Hao, T.-H., in this volume.Google Scholar
18. Kroupa, F. and Price, P.B., Phil. Mag. 6, 243 (1961).Google Scholar
19. Balluffi, R.W. and Granato, A.V., in Dislocations in Solids, Vol. 4, edited by Nabarro, F.R.N. (North-Holland Publishing Company, New York, 1979) pp. 1–134.Google Scholar