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Discrete State Simulation of Electrical Conductivity and the Peltier Effect for Arbitrary Band Structures

Published online by Cambridge University Press:  21 March 2011

Peter P. F. Radkowski III  and
Timothy D. Sands
Peter P. F. Radkowski III
Affiliation:
Applied Science and Technology Graduate Group and Materials Science and Engineering University of California Berkeley, California 94720
Timothy D. Sands
Affiliation:
Applied Science and Technology Graduate Group and Materials Science and Engineering University of California Berkeley, California 94720
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Abstract

An object-oriented, discrete state method for simulating coupled systems was defined. A proof-of-principle simulation of the effect of acoustic phonon scattering on electrical current was performed. Steady-state and relaxation processes were numerically simulated. A relaxation time constant was measured. The numerical simulation of Peltier cooling and heating was defined as a special case of the scattering and transport physics of the proof-of-principle simulation. The scattering terms were designed to account for local interface conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 691: Symposium G – Thermoelectric Materials 2001--Research and Applications , 2001 , G8.5
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1. Dresselhaus, M.S. et al. , “Low Dimensional Thermoelectrics,” XVI ICT '97, 1997.Google Scholar
2. Chen, G., “Thermal Conductivity and Ballistic-Phonon Transport in the Cross-Plane Direction of Superlattices, PRB, V. 57 (23), 1998.Google Scholar
3. Zandler, G. et al. , “A Comparison of Monte Carlo and Cellular Automata Approaches for Semiconductor Device Simulation,” IEEE Electron Device Letters, V 14 (2), 1993.Google Scholar
4. Vogl, P. et al. , “Cellular Automaton approach for Semiconductor Transport,” Theory of Transport Properties of Semiconductors, Chapman & Hall,1998.Google Scholar
5. Zandler, G., et al. “Cellular Automaton Study of Time-Dynamics of Avalanche Breakdown in IMPATT Diodes,” VLSI Design, 1998.Google Scholar
6. Saraniti, M. et al. , “Cellular automata simulation of nanometre-scale MOSFETs,” Semiconductor Science Technology, V 13, 1998.Google Scholar