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Directional Plasma Etching of Polysilicon in SF6/CFCL3 discharges

Published online by Cambridge University Press:  28 February 2011

Michael T. Mocella ,
Brian E. Thompson  and
Herbert H. Sawin
Michael T. Mocella
Affiliation:
Freon Products Laboratory, E.I.du Pont de Nemours and Company, Inc., W Wilmington, DE 19898
Brian E. Thompson
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Herbert H. Sawin
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

The directional etching of P-doped polysilicon has been studied as a function of power (0.2 – 0.8 W/cm3), pressure (0.2 – 0.4 torr), and CFC13 (FreonR-11) fraction (1 – 20%) in SF6 discharges.Over this parameter space, experimental measures of the etching rate, directionality, plasma impedance, optical emission, and ion-bombardment energy and flux were made.Through Ar actinometry, the concentrations of F and Cl were estimated.Response Surface Methodolgy was used to fit the measurements to polynomial models which were used in the subsequent kinetic modeling of the process.As the fraction of CFCl3 was increased from 1 to 20%, the F concentration fell by a factor of 3 while the Cl concentration increased by a factor of approximately 20.The mask undercut and etching rate, however changed less than a factor of two with the CFCl.increase.The measured average ionbombardment energies were well correlated using discharge currents.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 281
Copyright
Copyright © Materials Research Society 1986

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