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Direct Writing of Copper Lines From Copper Formate Film

Published online by Cambridge University Press:  26 February 2011

Arunava Gupta  and
Rangarajan Jagannathan
Arunava Gupta
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
Rangarajan Jagannathan
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The focused output from an argon ion laser (514 nm) has been used for direct writing of copper by photothermal decomposition of copper formate film on quartz and silicon substrates. The low decomposition temperature of the metallo-organic (∼200°C) allows deposition of fairlys thick copper lines at writing speeds as high as 10 mm/sec. The processing can be done in air since the rapid decomposition and cooling under scanning condition results in minimal oxidation of the deposited copper. The temperature distribution produced during laser writing on silicon substrate has been calculated to help explain some of the observed results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 95
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Houle, F.A., Jones, C.R., Baum, T., Pico, C., and Kovac, C.A., Appl. Phys. Lett. 46, 204 (1985); C.R. Jones, F.A. Houle, C.A. Kovac, and T. Baum, Appl. Phys. Lett. 46. , 97 (1985).Google Scholar
2 Puippe, J.C., Acosta, R.E., and Gutfeld, R.J. von, J. Elect. Soc. 128, 2539 (1981).Google Scholar
3 Gerassimov, R.B., Metev, S.M., Savtchenko, S. K., Kotov, G.A., and Veiko, V.P., Appl. Phys. B 28, 266 (1982); M. Ritz, V. Srinivasan, S.V. Babu, and C. Patel in Photon. Beam, and Plasma Stimulated Chemical Processes at Surfaces , edited by V.M. Donnelly, I.P. Herman, and M. Hirose (Mater. Res. Soc. Proc. 75. , Pittsburgh, PA 1987) pp. 433-440.Google Scholar
4 Fisanick, G.J., Gross, M.E., Hopkins, J.B., Fennell, M.D., Schnoes, K.J., and Katzir, A., J. Appl. Phys., 57, 1139 (1985).Google Scholar
5 Gross, M.E., Appelbaum, A., and Gallagher, P.K., J. Appl. Phys. 67, 1628 (1987).Google Scholar
6 Gupta, A., Sausa, R.C., and White, J.R. in Photon. Beam, and Plasma Stimulated Chemical Processes at Surfaces, edited by Donnelly, V.M., Herman, I.P., and Hirose, M. (Mater. Res. Soc. Proc. 75., Pittsburgh, PA 1987) pp. 83–90.Google Scholar
7 Galwey, A.G, Jamieson, D.M., and Brown, M.E., J. Phys. Chem, 78, 2664 (1974).Google Scholar
8 Piglmayer, K., Doppelbauer, J., and Bauerle, D. in Laser-Controlled Chemical Processing of Surfaces, edited by Johnson, A. Wayne, Ehrlich, D.J., and Schlossberg, H.R. (Mater. Res. Soc. Proc. 29., Pittsburgh, PA 1984) pp. 47–54.Google Scholar
9 Sanders, D.J., Appl. Opt. 23, 30 (1984).Google Scholar
10 Baufay, L., Houle, F.A., and Wilson, R.J., J. Appl. Phys. 61, 4640 (1987).Google Scholar
11 Ronnquist, A. and Fishmeister, H., J. Inst. of Metals 89, 65 (1984).Google Scholar