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Direct Wafer Bonding of Preamorphized Silicon Wafers.

  • A. Laporte (a1) (a2), G. Sarrabayrouse (a1), M. Benamara (a3), A. Claverie (a3), A. Rocher (a3), L. Lescouzères (a2) and A. PeyreLavigne (a2)...

Abstract

This paper presents the comparison of the structural and electrical characteristics of Si/Si bonded interfaces depending on whether the surface layers were rendered amorphous by high dose ion implantation prior to annealing or not. While the general structure of the interfaces is the same when the wafers are preamorphized more precipitates are seen in the interface along with a few extended defects propagating into the volume. The most striking difference between both procedures is that the Spreading Resistance profile is more complicated in shape and difficult to master in the case of preamorphized wafers. Careful TEM analysis shows that only in this case the interfacial region is stressed in contrast with the fully relaxed structure obtained by direct bonding of crystalline wafers.

For these reasons, there is little chance that the preamorphization technique will benefit to the bonding procedure of direct Si wafers.

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1. Secco d’Aragona, F. and Ristic, LJ., Sensor technology and devices. Artech House Editor, (1994), 157201.
2. Ciarlo, Dino R., Proc. of the 2nd Int. Symp. on Semiconductor wafer Bonding, (1993), 313–326.
3. Maszara, W.P., Goetz, G., Caviglia, A. and Mckitterick, J.B., J. Appl. Phys., 64 (1988) 4943.
4. Hughes, Donald L., Proc. of the 2nd Int. Symp. on Semiconductor wafer Bonding, (1993), 17–31.
5. Nakagawa, A., Imamura, K. and Furukawa, K., Toshiba Review No161, 34, 1987
6. Parkes, , Murray, E., Gamble, H.S., Armstrong, B.M., Mitchell, S J.N. and Armstrong, G.A., in Extended Abstracts 1991 Electrochemical. Soc. Fall Meeting, Vol.91-2, Phoenix, p.724 (1991)
7. Ohashi, H., Furukawa, K, Atsuta, M., Nakagawa, A. and Imamura, K., IEDM Techn. Dig., IEEE, New York, (1987) 678.
8. Laporte, A., Bagneres, M., Stutzemberger, D., Reynes, J.M., Sarrabayrouse, G. “, 7th Int. Symp. on Power Semiconductor Devices & ICs”, Yokohama (Japon), May 1995.
9. Benamara, M., Rocher, A., Lanaab, L., Claverie, A., Laporte, A., Sarrabayrouse, G., Lescouzères et, L. PeyreLavigne, A., CRAS Paris, 318 II (1994), 14591464.
10 Laporte, A., Sarrabayrouse, G., PeyreLavigne, A., Lescouzères, L., Benamara, M., Rocher, A. and Claverie, A., Proc. of the 6th Int. Symp. on Power Semiconductor Devices & ICs, Davos (1994), 293296.
11. Benamara, M., Rocher, A., Laporte, A., Sarrabayrouse, G., PeyreLavigne, A., Lescouzères, L., Fnaiech, M. and Claverie, A., this proceeding.
12. Laporte, A., Sarrabayrouse, G., PeyreLavigne, A., Lescouzères, L., Benamara, M., Rocher, A., Lanaab, L., Claverie, A. , 3rd Int. Symp. on Semiconductor wafer Bonding, May 1995, Reno.
13. de Mauduit, B., Laânab, L., Faye, M.M., Claverie, A., Bergaud, C. and Martinez, A., Nucl. Instr. and Meth., B84 (1994), 190194.
14. Claverie, A., Laânab, L., Bergaud, C., Martinez, A. and Mathiot, D., Nucl. Intr. and Methods in Phys. Res. B, B96 (1995), 202209.
15. Wijaranakula, W., Jpn. J. Appl. Phys., 32 (1993), 38723878.
16. Schlötterer, H., Solid. State Electronics, 11 (1968), 947956.
17. Ishigami, S.I., Kawai, Y., Furuya, H., Shingyouji, T., Jpn. J. Appl. Phys. Vol. 32 (1993), 44084412.

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Direct Wafer Bonding of Preamorphized Silicon Wafers.

  • A. Laporte (a1) (a2), G. Sarrabayrouse (a1), M. Benamara (a3), A. Claverie (a3), A. Rocher (a3), L. Lescouzères (a2) and A. PeyreLavigne (a2)...

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