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Direct Wafer Bonding and Layer Transfer: An Innovative way for the Integration of Ferroelectric Oxides into Silicon Technology

Published online by Cambridge University Press:  10 February 2011

M. Alexe ,
St. Senz ,
A. Pignolet ,
J. F. Scott ,
D. Hesse  and
U. Gösele
M. Alexe
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle/Saale, Germany
St. Senz
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle/Saale, Germany
A. Pignolet
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle/Saale, Germany
J. F. Scott
Affiliation:
On leave of absence from: University of New South Wales, Sydney, Australia
D. Hesse
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle/Saale, Germany
U. Gösele
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle/Saale, Germany
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Abstract

An innovative fabrication process of ferroelectric-semiconductor heterostructures based on direct wafer bonding has been demonstrated. Ferroelectric thin films of Bi4Ti3O12 (BiT) and Pb(Zr,Ti)O3 (PZT) were deposited on 3” Si wafers using chemical solution deposition (CSD) and subsequently crystallized by conventional and rapid thermal annealing. The films were then polished in order to reach a roughness and waviness suitable for bonding. They were then directly bonded to silicon wafers in a micro-cleanroom and annealed in air at temperatures ranging from 200°C to 500°C. Bonding energies up to 1.5 J/m2 have been achieved which is almost high enough to consider the two bonded wafers as a single body. Metal-Ferroelectric-Silicon (MFS) structures containing the ferroelectric-Si bonded interface were accomplished by polishing down and etching the handling wafer. The MFS structures were electrically characterized by capacitance-voltage (C-V) and charge-voltage (Q-V) measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 517
Copyright
Copyright © Materials Research Society 1998

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References

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