Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-24T01:40:37.867Z Has data issue: false hasContentIssue false
  • English
  • Français

Diffusion Process Of Interstitial Atoms In Inp Studied By Transmission Electron Microscopy

Published online by Cambridge University Press:  15 February 2011

Y. Ohno ,
S. Takeda  and
M. Hirata
Y. Ohno
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1-16, Machikane-yama, Toyonaka, Osaka 560, Japan
S. Takeda
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1-16, Machikane-yama, Toyonaka, Osaka 560, Japan
M. Hirata
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1-16, Machikane-yama, Toyonaka, Osaka 560, Japan
Get access

Abstract

It is found that interstitial agglomerates are formed uniformly in an irradiated area of InP by annealing at the temperature above 700 K after 200 keV-electron irradiation. TEM observation shows that the number density of interstitial atoms in the agglomerates reached a maximum value when the growth of all the agglomerates stopped. The final density did not depend on annealing temperature but on electron dose, and it increased quadratically with electron dose up to 2×1022 cm−2. In order to explain the experimental results, we have proposed a new model that the agglomerates are formed by thermal diffusion and agglomeration of interstitial-pairs, i.e. Ini-Pi interstitial-pairs. From the analysis, the migration energies for the pairs are estimated to be 1.52 eV. The onset temperature for the diffusion of the pairs is estimated as 550 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 435
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Brailovskii, E. Yu., Karapetyan, F. K., Megera, I. G., and Tartachnik, V. P., Phys. Status Solidi A 71, 563 (1982).Google Scholar
[2] Sibille, A. and Rao, E. V. K., J. Cryst. Growth 64, 194 (1983).Google Scholar
[3] Kennedy, T. A. and Wilsey, N. D., Appl. Phys. Lett. 44, 1089 (1984).Google Scholar
[4] Karsten, K. and Ehrhart, P., Phys. Rev. B 51, 10508 (1994).Google Scholar
[5] Brudnyi, V. N., Charchenko, V. A., Kolin, N. G., Novikov, V. A., Pogrebnyak, A. D., and Ruzimov, Sh. M., Phys. Status Solidi A 93, 195 (1986).Google Scholar
[6] Brudnyi, V. N., Vorobiev, S. A., and Tsoi, A. A., Appl. Phys. A 29, 219 (1982).Google Scholar
[7] Kiritani, M., J. Nucl. Mater. 216, 220 (1994).Google Scholar
[8] Urban, K. and Yoshida, N., Radiat. Eff. 42, 144 (1979).Google Scholar
[9] Ohno, Y., Takeda, S., and Hirata, M., Phys. Rev. B 54, 4642 (1996).Google Scholar
[10] Massarani, B. and Bourgoin, J. C., Phys. Rev. B 34, 2470 (1986).Google Scholar
[11] Noda, N., Takeda, S., Phys. Rev. B 53, 7197 (1995).Google Scholar
[12] Tapster, P. R., J. Cryst. Growth 64, 200 (1983).Google Scholar