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Diffusion of Boron from Polysilicon at High Concentrations

  • R. F. Lever (a1), B. Garben (a2), C. M. Hsieh (a1) and W. A. Orr Arienzo (a1)

Abstract

Boron diffusion profiles in single crystal silicon from highly doped polysilicon sources have been measured using SIMS after diffusion at 950°C for various times. These data have been analyzed to determine D(c) of boron in the single crystal. It is ncrmally assumed that at high boron concentrations D increases linearly with concentration. However, the shape of these profiles indicates that for a polysilicon source, this behavior does not appear to hold. Using Bolzmann-Matano analysis, D(c) was found to be insensitive to boron concentrations above 3.0E19 atoms/cm3. The results of this analysis were confirmed by using them as input to a diffusion simulation computer program and excellent agreement with the experimental profiles was obtained. The value of D was found to be unusually high at all concentrations in the single crystal and increased almost linearly with the doping level of the polysilicon. The effect of the furnace ramp-down cycle on the profiles near the crystal surface have also been investigated.

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References

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[1] Garben, B., Cunningham, B. and Arienzo, W. A. Orr, “Epitactic Alignment of Boron-Defect Polysilicon on Single Crystal Silicon”, to be published.
[2] Crowder, B. L., Ziegler, J. F., Morehead, F. F., and Cole, G. W. in “Ion Implantation in Semiconductors and Other Materials”, p. 267, ed. by Crowder, B. L., Plenum Press, New York, 1973.10.1007/978-1-4684-2064-7_23
[3] Armiglato, A., Nobili, D., Ostoja, P., Servidori, M., and Solmi, S., “Solubility and Precipitation of Boron in Silicon and Supersaturation Resulting by Thermal Predeposition”., Semiconductor Silicon 1977, p. 638, ed. Huff, H. R. and Sirtl, E., The Electrochemical Society, Princeton, NJ.
[4] Peart, R. F. and R. C. Newman in “Radiation Damaqe and Defects in Semiconductors”, Whitehouse, J. E. Editor, p. 170, Institute of Physics, London (1973).
[5] Hu, S. M., Fahey, P. and Dutton, R. W., J. Appl. Physics 54, p. 6912 (1983).10.1063/1.331998

Diffusion of Boron from Polysilicon at High Concentrations

  • R. F. Lever (a1), B. Garben (a2), C. M. Hsieh (a1) and W. A. Orr Arienzo (a1)

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