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Diffusion of Atoms Implanted in Poly Silicon Layer on Insulator

  • M. Takai (a1), M. Izumi (a1), T. Yamamoto (a1), A. Kinomura (a1), K. Gamo (a1), T. Minamisono (a2) and S. Namba (a1)...

Abstract

Diffusion of arsenic implanted in poly-silicon on insulator structures after furnace and rapid thermal annealing (RTA) has been investigated by Rutherford backscattering (RBS) and Hall effect measurements. The diffusivity for As in poly–Si on insulator is represented by D = 3.12 × 104 exp (− 3.86/kT) cm/sec for the tail region after both RTA and furnace annealing and D = 34.0 exp (− 3.42/kT) cm2/sec for the peak region after RTA. Poly–Si layers after implantation and annealing were found to have tensile stresses of 3.0 – 4.0 kbar.

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