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Diffusion Lengths in a-SiGe:H and a-SiC:H Alloys from Optical Grating Technique

  • G. H. Bauer (a1), C. E. Nebel (a1) and H.-D. Mohring (a1)

Abstract

Ambipolar diffusion lengths in a-SiGe:H and a-SiC:H have been analyzed by Steady State Photocarrier Grating Technique. Diffusion lengths and photoconductivity of a-Si:H are considerably affected by alloying. Photoconductivity in a-SiGe:H can be improved by special deposition methods, diffusion lengths, however turn out to remain nearly unchanged. The comparison of diffusion lengths and -ho~oconductivity yields hole mobilities in a-Si1-xGex:H of 10-2cm2 /Vs for O≤×≤O.2. For a-Si:H changes in photoconductivity by generation of defects (light soaking) result in noticeable changes in diffusion lengths, whereas different photoconductivities in a-SiGe:H caused by different deposition methods end up in the same diffusion lengths. Consequently the improvement of a-SiGe:H photoconductivity by changes in deposition condition is by far a much more complex process than only decrease of density of midgap states.

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Diffusion Lengths in a-SiGe:H and a-SiC:H Alloys from Optical Grating Technique

  • G. H. Bauer (a1), C. E. Nebel (a1) and H.-D. Mohring (a1)

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