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Diffusion Length Measurements of Minority Carriers in Si-SiO2 Using the Photo-Grating Technique

  • Y. Posada (a1), I. Balberg (a2), L.F. Fonseca (a1), O. Resto (a1) and S.Z. Weisz (a1)...

Abstract

We have studied the microstructure, the transport and the phototransport properties of the Si crystallites network in Si-SiO2 composites. We have found that in our co-sputtered samples the average crystallite diameter, d, decreases from 40 to 5 nm as the content of the silicon, x, decreases from 80 to 40 volume%, and that the percolation of the network sets is at x ≈ 40 vol%. A simultaneous study of the photoluminescence (PL) shows the, quantum confinement, expected red shift of its peak with increasing d. On the other hand the very strong observed decrease of the PL intensity with x is interpreted here as due to a deconfinement effect that is dominated by the increase in the cluster size of connected Si crystallites. The results suggest that a closed random packing of the Si crystallites will be the preferred network for high intensity electroluminescence.

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Diffusion Length Measurements of Minority Carriers in Si-SiO2 Using the Photo-Grating Technique

  • Y. Posada (a1), I. Balberg (a2), L.F. Fonseca (a1), O. Resto (a1) and S.Z. Weisz (a1)...

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