Hostname: page-component-8448b6f56d-c47g7 Total loading time: 0 Render date: 2024-04-19T05:12:10.239Z Has data issue: false hasContentIssue false
  • English
  • Français

Diffusion Barrier Property of Sputtered Molybdenum Nitride Films for Dram Copper Metallization

Published online by Cambridge University Press:  15 February 2011

Jong-Wan Park  and
Jeong-Youb Lee
Jong-Wan Park
Affiliation:
Dep. of Metallurgical Engineering, Hanyang University, Seoul 133-791, KOREA
Jeong-Youb Lee
Affiliation:
Dep. of Metallurgical Engineering, Hanyang University, Seoul 133-791, KOREA
Get access

Abstract

Diffusion barrier property of sputtered molybdenum nitride films for DRAM copper metallization was investigated as a function of annealing temperature. Molybdenum nitride thin films on silicon remained stable upon annealing 650°C-30min, but h-MoSi2 and t-MoSi2 were formed after the heat treatment at 700°C and Mo5Si3 phase was formed at 850°C. Increasing the annealing temperature decreased the stress of the γ-Mo2N/Si film down to about 0.8×1010dyne/cm2 at 800°C due to the reduction of the intrinsic stress component. Copper films on silicon substrates separated by thin layers of molybdenum nitride remained stable during the heat treatment at 600°C, but they began to fail as a diffusion barrier after the heat treatment at 650°C, when molybdenum silicides and copper silicide were thought to be formed. On heating, Cu/γ-Mo2N/Si films were affected by thermal stress as due to the thermal expansion coefficient between copper and molybdenum nitride thin films. Furthermore, interlayer interactions between copper and silicon increased with increasing the annealing temperature. The interlayer reactions were investigated by Rutherford backscattering spectrometry, X-ray photoelectron spectrscopy and Nomarski microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 687
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Weber, E.R., Appl. Phys. A30, 1–22 (1983).Google Scholar
2. Broniatowski, A., Phys. Rev. Lett. 62, 3074 (1989).Google Scholar
3. Ting, C.Y. and Wittmer, M., Thin Solid Films 96, 327 (1982).Google Scholar
4. Wittmer, M., J. Vac. Sci. Technol. A 3, 1797 (1985).Google Scholar
5. Holloway, K., Fryer, M., Cabral, C. Jr.,, Harper, J.M.E., Bailey, P.J. and Kelleher, K.H., J. Appl. Phys. 71, 5433 (1992).Google Scholar
6. Redkar, S. and Kim, K.B., J. Appl. Phys. 68, 5176 (1990).Google Scholar
7. Shih, K.K. and Dove, D.B., J. Vac. Sci. Technol. A 8, 1359 (1990).Google Scholar
8. Danroc, J., Aubert, A. and Gillet, R., Thin Solid Films 159, 281 (1987).Google Scholar
9. Kawaguchi, K. and Shin, S., J. Appl. Phys. 67, 921 (1990).Google Scholar
10. Anitha, V.P., Bhattacharya, A., Patil, N.G. and Major, S., Thin Solid Films 236, 306 (1993).Google Scholar
11. Freund, L.B., J. Appl. Mech. 54, 553 (1987).Google Scholar
12. Murakami, M. and Chaudhari, P., Thin Solid Films 46, 109 (1977).Google Scholar
13. Flinn, P.A., Gardner, D.S. and Nix, W.D., IEEE Trans. Electron Devices ED–34, 689 (1987).Google Scholar