Hostname: page-component-8448b6f56d-gtxcr Total loading time: 0 Render date: 2024-04-24T14:43:06.590Z Has data issue: false hasContentIssue false

Dielectric Spectroscopy Study Of Znse Grown By Physical Vapor Transport

Published online by Cambridge University Press:  10 February 2011

Julie Kokan
Affiliation:
School of Materials Science and Engineering, The Georgia Institute of Technology, Atlanta, GA, 30332–0245, rosario.gerhardt@mse.gatech.edu
Rosario Gerhardt
Affiliation:
School of Materials Science and Engineering, The Georgia Institute of Technology, Atlanta, GA, 30332–0245, rosario.gerhardt@mse.gatech.edu
Ching-Hua Su
Affiliation:
MSFC, NASA, Huntsville, AL.
Get access

Abstract

ZnSe, although generally thought of as a wide band gap semiconductor, is insulating in the as-grown state. It is only after heat treatment in a zinc rich atmosphere that semiconducting properties are observed Therefore, dielectric spectroscopy is an appropriate tool to study the electrical properties of as grown ZnSe. The dielectric properties of large-grained samples of ZnSe grown by physical vapor transport were measured as a function of frequency. Differences can be seen in the dielectric properties of samples grown under different conditions (such as the effect of a seed and the orientation of the gravity field during growth). The spectra of heat treated samples were also acquired and were found to exhibit significant deviations from those of the as grown crystals.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Su, C.H., Sha, Y.G., “Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport,Current Topics in Crystal Growth Research 2(1995)401433.Google Scholar
2. Su, C.H., Sha, Y.G., Mazuruk, K., Lehoczy, S.L., Liu, H.C., Fang, R., Bebrick, R.F., “Mass Flux and Partial Pressures of ZnSe by Physical Vapor Transport,J. Cryst. Growth, 166(1996)736744.Google Scholar
3. Bouley, J.C., Blanconnier, P., Herman, A., Ged, P.H., Hmoc, P., Noblanc, J.P., “Luminescence in Highly Conductive n-type ZnSe,J. Appl. Phys., 46[8](1975)35493555.Google Scholar
4. Chiu, D.M., “Electrical Properties of n-type ZnSe:I and ZnSe:I:In Single Crystals,J. Phys. D:Appl. Phys. 16(1983)22812295.Google Scholar
5. Grimmeiss, H.G., and Ovren, C., “Identification of Deep Centers in ZnSe,J. Appl. Phys 48[12](1977)51225126.Google Scholar
6. Sethi, B.R., Mathur, P.C., “Impurity Band Conduction in Compensated ZnSe Crystal,J Appl. Phys. 46[6](1978)36183620.Google Scholar
7. Aven, M. and Woodbury, H.H., “Purification of II-VI Compounds by Solvent Extraction,Appl. Phys. Lett. 1[3](1962)5354.Google Scholar
8. McDonald, J.R., Impedance Spectroscopy, Emphasizing Solid Materials and Systems, John Wiley and Sons, New York (1987).Google Scholar
9. Jonscher, A.K., Dielectric Relaxation in Solids, Chelsea Dielectrics Press, London (1983).Google Scholar
10. Electrically Based Microstructural Characterization, ed. by Gerhardt, R.A., Taylor, S.R., and Garboczi, E.J., MRS Symp. Proc. 411, MRS Pittsburgh, PA(1996).Google Scholar
11. Kokan, J.R., and Gerhardt, R.A., “Dielectric Spectroscopy of Insulating Matrix Composites,” Electrically Based Microstructural Characterization, ed. by Gerhardt, R.A., Taylor, S.R., and MRS Symp. Proc. 500, MRS Pittsburgh, PA, to be published.Google Scholar
12. Gerhardt, R. “Causes of Dielectric Dispersion in Ferroelectric Materials,” Electrically Based Microstructural Characterization, ed. by R.A. Gerhardt, S.R. Taylor, and M. Alim, MRS Symp. Proc. 500, MRS Pittsburgh, PA, to be published.Google Scholar
13. Gerhardt, R.Dielectric and Impedance Spectroscopy Revisited: Distinguishing Localized Relaxation from Long Range Conductivity,J. Phys. Chem. Solids 55[12](1994)14911506.Google Scholar
14. CRC Handbook of Chemistry and Physics, ed. by Lide, D.R., CRC Press (1994)1253.Google Scholar