Skip to main content Accessibility help

Dielectric Function and Defect Structure of CdTe Implanted by 350-keV Bi Ions

  • Peter Petrik (a1), Miklós Fried (a1), Zsolt Zolnai (a1), Nguyen Q. Khánh (a1), Jian Li (a2), Robert W. Collins (a2) and Tivadar Lohner (a1)...


In this work we have developed optical models for the ellipsometric characterization of Bi-implanted CdTe. We have characterized the amount and nature of disorder using Rutherford Backscattering Spectrometry combined with channeling (RBS/C). Samples with a systematically varying degree of disorder were prepared using ion implantation of Bi into single-crystalline CdTe at an energy of 350 keV with increasing doses from 3.75×1013 cm-2 to 6×1014 cm−2. The motivation for use of the high atomic mass Bi ions was that previous studies using lighter ions revealed damage at a low level, even for doses several times higher than the amorphization threshold estimated by simulation [P. Petrik et al., phys. stat. sol. (c) 5, 1358 (2008)]. In contrast, Bi ions create sufficient disorder for investigation of the changes in dielectric function critical point (CP) features in a wider variety of structures from single-crystalline to the disordered state. The CP features can be described by numerous methods starting from the standard CP model, through the parameterization of Adachi [Adachi et al., J. Appl. Phys. 74, 3435 (1993)], and finally to the generalized CP models. The standard CP model has been demonstrated to be a reliable approach for polycrystalline CdTe characterization used in photovoltaic applications [Li et al., phys. stat. sol. (a) 205, 901 (2008)].



Hide All
1. Petrik, P., Khành, N. Q., Li, Jian, Chen, Jie, Collins, R. W., Fried, M., Radnóczi, G. Z., Lohner, T., and Gyulai, J., phys. stat. sol. (c) 5, No. 5, 13581361 (2008).
2. Li, Jian, Chen, Jie, Podraza, N. J., and Collins, R. W., Proceedings of the 4th World Conference on Photovoltaic Energy Conversion, May 2006, Waikoloa, Hawaii, USA, IEEE Proceedings ISBN 1-4244- 0017-1, Volume 1, 392 (2006).
3. Gupta, A. and Compaan, A. D., Appl. Phys. Lett. 85, 684 (2004).
4. Lee, Joungchel, Rovira, P. I., An, Ilsin, and Collins, R. W., Rev. Sci. Instr. 69, 1800 (1998).
5. Collins, R. W., An, Ilsin, Lee, Joungchel, and Zapien, J. A., in Handbook of Ellipsometry (William Andrew, Norwich, NY, 2005), p. 481.
6. The Stopping and Range of Ions in Matter,
7. Johs, B., Woollam, J.A., Herzinger, C.M., Hilfiker, J.N., Synowicki, R., and Bungay, C., Proc. Soc. Photo- Opt. Instrum. Eng., Crit. Rev. 72, 29 (1999).
8. Kótai, E., Nucl. Instr. and Meth. B 85, 588 (1994).
9. Lautenschlager, P. et al. , Phys. Rev. B 36, 4821 (1987).
10. Adachi, S. et al. , J. Appl. Phys. 74, 3435 (1993).
11. Johs, B. et al. , Thin Solid Films 313–314, 137 (1998).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed