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Device Degrading Interactions between Silicide Films and Bulk Defects during Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

D.R. Sparks  and
N.S. Alvi
D.R. Sparks
Affiliation:
Delco Electronics Corp. Kokomo, IN 46902
N.S. Alvi
Affiliation:
Delco Electronics Corp. Kokomo, IN 46902
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Abstract

The interaction between titanium and nickel silicide films with dislocations generated at the wafer edge by thermal stress is examined in this work. The local dislocation density of the silicon wafers varied from zero to 4.8×106cm across a slice. Both titanium and nickel were deposited as thin films in the contact regions of the p-n junction diodes. Wafers were rapid thermal annealed, sequentially, for 30 s at temperatures between 300°C and 700°C. Reverse bias leakage current measurements of the as-deposited and annealed wafers were used to evaluate the impact of silicides and bulk defects on devices. A significant increase in leakage current due to the silicide/defect interaction was observed above 600 °C for both titanium and nickel. Leakage currents of devices fabricated in regions of high bulk defect density increased with the anneal temperature and dislocation density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 167
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Goetzberger, A. and Shockley, W., J. Appl. Phys., 31, p.1821 (1960).CrossRefGoogle Scholar
2. Barson, F., Hess, M.S. and Roy, M.M., J. Electrochem. Soc., 116, p.304 (1969).CrossRefGoogle Scholar
3. Ravi, K.W., Varker, C.J. and Volk, C.E., J. Electrochem. Soc., 120, p.534 (1973).Google Scholar
4. Gasner, J.T., Extended Abstracts 88-1, Abstract No. 86, (1988).Google Scholar
5. Patel, J., in “Semiconductor Silicon 1981,” eds., Huff, H.R., Kriegler, R.J. and Takeishi, Y., The Electrochemical Society, Pennington, NJ, p.189 (1981).Google Scholar
6. Sparks, D. R., Dahlquist, D.M., Adam, P.S. and Reger, R., Solid St. Technol., 30, p.101 (1987).Google Scholar
7. Leroy, B. and Plougonven, C., J. Electrochem. Soc., 127, p.961 (1980).Google Scholar
8. Fair, R.B., J. Electrochem. Soc., 128, p.1360 (1981).Google Scholar
9. Carter, C., Maszara, W., Sadana, D.K., Rozgonyi, G.A., Lui, J. and Wortman, J., Appl. Phys. Lett., 44, p.459 (1984).Google Scholar
10. Wen, D.S., Smith, P.L., Osburn, C.M. and Rozgonyi, G.A., Appl. Phys. Lett., 51, p.1182 (1987).Google Scholar
11. Levy, R.A., Green, M.L., Gallagher, P.K. and Ali, Y.S., J. Electrochem. Soc., 133, p. 1905 (1986).Google Scholar
12. Lui, R., Williams, D.S and Lynch, W.T., J. Appl. Phys., 63, p.1990 (1988).Google Scholar
13. Weber, E.R., Appl. Phys., A–30, p.1 (1983).CrossRefGoogle Scholar
14. Sparks, D.R. and Chapman, R.G., J. Electrochem. Soc., 133, p.1201 (1986).CrossRefGoogle Scholar
15. Sparks, D.R., Chapman, R.G. and Alvi, N.S., Appl. Phys. Lett., 49, p.525 (1986).Google Scholar
16. Sparks, D.R., J. Electrochem. Soc., 134, p.458 (1987).Google Scholar
17. Sirtl, E. and Adler, A., Z. Metallkd., 52, p.529 (1961).Google Scholar