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Device Degradation on a Full-Frame CCD Image Sensor with a Transparent Gate Electrode

  • Biay-Cheng Hseih (a1), S. Kosman (a1), Y.C. Lo (a1), K. Jayakar (a1), M. Mehra (a1), P. Roselle (a1) and W. C. Chang (a1)...

Abstract

The electrical and optical properties of Indium-Tin-Oxide (ITO) films, deposited by radio frequency (r.f.) magnetron sputtering, were studied. ITO films, when deposited using optimum sputtering conditions, were reproducibly prepared with resistivity as low as 1.5 × 10−4 Ω-cm and optical transmissivity higher than 80% over the wavelength range of interest. Device stability when ITO is used as a replacement for polysilicon as a gate electrode in silicon charge-coupled device (CCD) image sensors was also studied. After an anneal process at 950 °C in N2 the device degraded. The degradation can be attributed to the generation of oxide charge and interface states in the ITO/SiO2/Si system.

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Device Degradation on a Full-Frame CCD Image Sensor with a Transparent Gate Electrode

  • Biay-Cheng Hseih (a1), S. Kosman (a1), Y.C. Lo (a1), K. Jayakar (a1), M. Mehra (a1), P. Roselle (a1) and W. C. Chang (a1)...

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