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Development of Si(100) Surface Roughness at the Initial Stage of Etching in F2 and XeF2 Gases - Ellipsometric Study

Published online by Cambridge University Press:  15 February 2011

V.S. Aliev  and
V.N. Kruchinin
V.S. Aliev
Affiliation:
Inst of Semiconductor Physics SB RAS, 13 Academician Lavrentyev, Novosibirsk, 630090, Russia, aliev@ispht.nsk.su
V.N. Kruchinin
Affiliation:
Inst of Semiconductor Physics SB RAS, 13 Academician Lavrentyev, Novosibirsk, 630090, Russia, aliev@ispht.nsk.su
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Abstract

The development of the roughness of the Si (100) surface has been investigated at the initial stage of etching in the molecular flow of F2 and XeF2 gases. It was discovered that roughness grew during etching in XeF2 gas and decreased during etching in F2 gas, that is, F2 gas polishes Si surface unlike XeF2. This difference was explained with the help of ellipsometric study of the kinetics of adsorption layer formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 440: Symposia CA – Structure and Evolution of Surfaces , 1996 , 77
Copyright
Copyright © Materials Research Society 1997

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