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Development of New Materials by Ionized-Cluster Beam Technique

Published online by Cambridge University Press:  25 February 2011

T. Takagi
T. Takagi*
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo Kyoto 606, Japan
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Abstract

In the Ionized-Cluster Beam (ICB) technique, deposition by macroaggregates consisting of 500 to 2000 atoms loosely coupled together involves low ratios of charge to mass. Consequently, high mass density beams at low equivalent energy per atom in an optimum range for film formation can be transported without problems due to space charge repulsion forces and deposition onto insulating substrates is easily possible due to low accumulation of ion charge. The presence of ionic charge has great influence upon film formation mechanisms in spite of low content of ions in the total flux. Also, because of the kinetics of cluster breakup upon impact, enhancement of migration of adatoms upon a substrate surface can be achieved by increasing the acceleration voltage. It is possible to control the mechanical, crystallographic, optical and magnetic properties of films over three dimensions by variation of acceleration voltage or ion content in the total flux. Films of many materials have been formed at low temperatures with well-controlled characteristics. Among examples of interest are included metal and semiconductor material films for functional devices and VLSI applications, intermetallic compound films for magnetic or thermoelectric uses and organic material films. Results suggest that ICB offers exceptional potential for applications involving formation of new materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 501
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Takagi, T., Yamada, I., Kunori, M., and Kobiyama, S., proc. 2nd Int. Conf. Ion Sources, 1972, Vienna (Ostereichiche Studiengesellshaft fur Atomonergie, Vienna, 1982), p.790.Google Scholar
2. Takagi, T., Yamada, I. and Sasaki, A., Thin Solid Films 45, 569 (1977).Google Scholar
3. Borel, J.-P and Buttel, J. (ed.), “Small Particles and Inorganic Clusters”, Suf. Sci. 106 (1981).Google Scholar
4. Lee, J.K., Barker, J.A., and Abraham, F.F., J. Chem. Phys. 58, 3166 (1973).Google Scholar
5. Yokozeki, A. and Stein, G.D., J. Appl. Phys., 49,2224 (1978).Google Scholar
6. Hill, P.G., Witting, H., and Demetri, E.P., Trans. Am. Soc. Mech. Eng. 85, 303 (1963).Google Scholar
7. Yamada, I., in Takagi, T. (eD.), Proc. Int. Ion Eng. Congr. -ISAT'83 & IPAT83-, 1983., Kyoto (IEEJ, Tokyo, 1983), p. 1117.Google Scholar
8. Wagener, P.P., Clumpuer, J.A. and Wu, B.J.C., Phys. Fluids 15, 1869 (1972).Google Scholar
9. Stein, G.D., Phys.s Teach. 503 (1979).Google Scholar
10. Usui, H., Takaoka, H., Yamada, I., and Takagi, T., Proc. 4th Symp. Ion sources Ion-Assisted Technology, 1981, Tokyo (IEEJ, Tokyo, 1981), p175.Google Scholar
11. Yamada, I. and Takagi, T., Thin Solid Films 80, 105 (1981).Google Scholar
12. Yamada, I., Stein, G.D., Usui, H., and Takagi, T., Proc. 6th Symp. Ion Sources Ion-Assisted Technology, 1982, Tokyo (IEEJ, 1982), p.47.Google Scholar
13. Anderson, A.B.. J. Chem Phys. 64, 4046 (1976).Google Scholar
14. Buttet, J. and Borel, J.-P., Phys. Rev. A 13, 2287 (1976).Google Scholar
15. Takagi, T., Yamada, I. and Sasaki, A., Inst. Phys. Conf. Ser. 38, 142 (1978).Google Scholar
16. Bottiglioui, F., Coutant, J. and Fois, M., Phys. Rev. A 6, 1830 (1972).Google Scholar
17. Technical Data, Eaton Corporation, 133 Brimbal Avenue, Beverly, MA U.S.A.Google Scholar
18. Takagi, T., Yamada, I. and Takaoka, H., Surface Science 106, 544 (1981).22.Google Scholar
19. Yamada, I., Takaoka, H., Inokawa, H., Usui, H., Cheng, S.C. and Takagi, T., Thin Solid Films 92, (1982).Google Scholar
20. Takagi, T., Yamada, I. and Sasaki, A., J. Vac. Sci. Techno. 12, 1128 (1972).Google Scholar
21. Takagi, T., Yamada, I. and Sasaki, A., Thin Solid Films 39, 207 (1976).Google Scholar
22. Yamada, I., Saris, F.W., Takagi, T., Matsubara, K., Takaoka, H. and Ishiyama, S., Jap. J. Appl. Phys. 19, L181 (1980).Google Scholar
23. Takagi, T., Preprint of Ion Assisted Surface Treatments, Techniques and Processed, 1982, Coventry (The Metal Society, London, 1982), p.1.1.Google Scholar
24. Yamada, I., Nagai, I., Horie, M. and Takagi, T., J. Appl. Phys. 54, 1583 (1983).Google Scholar
25. Takagi, T., Yamada, I. and Matsubara, K., Thin Solid Films, 58, 9 (1970).Google Scholar
26. Takagi, T., Matsubara, K. and Takaoka, H., J. Appl. Phys. 51, 5419 (1980).Google Scholar
27. Matsubara, K., Horibe, T., Takaoka, H. and Takagi, T., Proc. 4th Symp. Ion Sources Ion Applic. Technology, 1980, Tokyo (IEEJ, Tokyo, 1980), p137.Google Scholar
28. Mameno, K., Matsubara, K. and Takagi, T., Proc. 6th Symp. Ion Sources Ion-Assisted Technology 1982, Tokyo (IEEJ, Tokyo, 1982), p.341.Google Scholar
29. Inokawa, H.,Fukushima, K., Yamada, I. and Takagi, T., Proc. 6th Symp. Ion Sources Ion-Assisted Technology, 1982, Tokyo (IEEJ, Tokyo, 335 1982), p.355.Google Scholar
30. Koyanagi, T., Matsubara, K., Takaoka, H. and Takagi, T., Proc. 6th Symp. Ion Sources Ion-Assisted Technology, 1982, Tokyo (IEEJ, Tokyo, 1982), p.409.Google Scholar
31. Takagi, T., Matsubara, K., Oura, M. and Koyanagi, T., Proc. 6th Symp. Ion Sources Ion-Assisted Technology, 1982, Tokyo (IEEJ, Tokyo, 1982), p.371.Google Scholar
32. Takaoka, H., Matsubara, K. and Takagi, T., in Takagi, T. (eD.), Proc. Int. Ion Eng. Congr. -ISAT'83 & IPAT'83-, 1983, Kyoto (IEEJ, Tokyo, 1982), p. 1241.Google Scholar
33. Usui, H., Naemura, N., Yamada, I. and Takagi, T., Proc. 6th Symp. Ion Sources and Ion-Assisted Technology, 1982, Tokyo (IEEJ, Tokyo, 1982), p.331.Google Scholar
34. Usui, H., Yamada, I. and Takagi, T., in Takagi, T. (eD.), Proc. Int. lonEng. Congr. -ISAT'83 & IPAT'83-, 1983, Kyoto (IEEJ, Tokyo, 1983), p.1427.Google Scholar