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Development of Infrared Detectors Based on Type II, InAsSb Strained-Layer Superlattices
Published online by Cambridge University Press: 25 February 2011
Abstract
An overview is provided of long wavelength, photovoltaic detectors constructed with type II (also known as “staggered”), III-V superlattices. Specifically, the electronic properties of InAsSb strained-layer superlattices and prototype detectors utilizing these structures are described.
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- Copyright © Materials Research Society 1991
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