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Development of Infrared Detectors Based on Type II, InAsSb Strained-Layer Superlattices

Published online by Cambridge University Press:  25 February 2011

Steven R. Kurtz
Steven R. Kurtz*
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87185
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Abstract

An overview is provided of long wavelength, photovoltaic detectors constructed with type II (also known as “staggered”), III-V superlattices. Specifically, the electronic properties of InAsSb strained-layer superlattices and prototype detectors utilizing these structures are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 163
Copyright
Copyright © Materials Research Society 1991

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References

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