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Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

Published online by Cambridge University Press:  15 February 2011

R. Venkatasubramanian ,
B. O'Quinn ,
J. S. Hills ,
M. L. Timmons  and
D. P. Malta
R. Venkatasubramanian
Affiliation:
Research Triangle Institute, RTP, NC 27709.
B. O'Quinn
Affiliation:
Research Triangle Institute, RTP, NC 27709.
J. S. Hills
Affiliation:
Research Triangle Institute, RTP, NC 27709.
M. L. Timmons
Affiliation:
Research Triangle Institute, RTP, NC 27709.
D. P. Malta
Affiliation:
Research Triangle Institute, RTP, NC 27709.
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Abstract

The characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AIGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grainstructures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 483
Copyright
Copyright © Materials Research Society 1996

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References

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