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Development Of Diamond Based Power Microelectronics

  • J. L. Davidson (a1), W. P. Kang (a1), Y. Gurbuz (a1), D. V. Kerns (a1), L. Davis (a1), K. Holmes (a1), L. Jiang (a1), Venkata Pulugurta (a1), W. Anurat (a1) and M. Howell (a1)...

Abstract

Diamond based power device structures such as resistor, capacitor, Schottky diode, p-n diode, thyristor, and field emitters are being investigated. Diamond resistors similar to standard thick film components in form and dimension were fabricated of polycrystalline diamond film. Using PECVD (plasma-enhanced chemical vapor deposition) processing to achieve diamond dielectric layers, high power, high energy density capacitors have been built. Despite grain boundaries and defects of polycrystalline diamond film, electronic devices such as field-effecttransistors and Schottky diodes have been developed. We have fabricated micro-patterned microtip arrays with this versatile new diamond technology as electron emitters. This paper will review diamond technology and results of this work.

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1. Davidson, J.L., “High Dielectric Strength, Thin Gate for Semiconductor Electronics”, Final Report PL-TR-95-1124 for Philips Lab., Space and Missiles Technology Directorate, Air force Material Command, Kirtland Air Force, NM 87117-5776, Dec. 1995.
2. Kang, W. P., Davidson, J. L., Gurbuz, Y., and Kerns, D. V., “Temperature Dependence and Series Resistance Effect in Polycrystalline Diamond Based Metal-Insulator-Semiconductor Schottky Diode”, Journal of Applied Physics, 78(2), pp. 11011107, 1995.
3. Davidson, J.L. and Kang, W.P., “Examples of Diamond Sensing Applications”, (invited) Materials Research Society, Boston, Massachusetts, pp.699, Nov. 27–Dec. 1, 1995.
4. Davidson, J. L., Wur, D. R., Kang, W. P., Kinser, D. L., and Kerns, D. V., “Polycrystalline Diamond Pressure Microsensor”, Diamond and Related Materials, 5, pp. 8692, 1996.
5. Kang, W. P., Davidson, J. L., Howell, M., Bhuva, B., Kinser, D. L., Kerns, D.V., Li, Q., and Xu, J.F., “Micro-Patterned Polycrystalline Diamond Field Emitter Vacuum Diode Arrays”, Journal of Vacuum Science Technology B, 14(3), pp. 20682071, 1996.
5. Kang, W. P., Davidson, J. L., Howell, M., Bhuva, B., Kinser, D. L., Kerns, D.V., Li, Q., and Xu, J.F., “Micro-Patterned Polycrystalline Diamond Field Emitter Vacuum Diode Arrays”, Journal of Vacuum Science Technology B, 14(3), pp. 20682071, 1996.
6. Yoder, M. N., “Application of Diamond Technology”, Proceedings of the Second Annual Technology Initiative Seminar, Durham, NC, 7–8 July, 1987.
7. Geis, M. W., IEEE Elec. Dev. Lett., Vol.8, pp. 34, 1987.10.1109/EDL.1987.26653
8. Shenai, K., “Diamond: A Semiconductor for High Temperature and High Power Electronics”, Proc. First International Symposium on Diamond and Diamond-like Film, Electrochemical Society, Vol.89–12, 1989.
9. Singer, A.T., “Strategies for CVD diamond cost reduction”, ECS Proceedings, Vol.95–4, pp.582, 1995.
10. Collins, A. T., “Formation of Electric Contacts on Insulating and Semiconducting Diamonds”, Diamond Res., pp. 1920, 1970.
11. Kang, W. P., Davidson, J. L., Stults, T. G. (MS Thesis), Independent research “Electrical Characterization and Analysis of a Metal/Undoped Diamond/ Doped Diamond Schottky Diode”, Vanderbilt University, 1994.
12. Moazed, K. L., “Resistivity of Metal Contacts to Diamond”, Proc. First International Symposium on Diamond and Diamond-like Film, Electrochemical Society, Vol.89–12, 1989.
13. Davidson, J. L., Ellis, C., Baginski, T., “Multilevel DLC (diamondlike carbon) Capacitor Structure”, Proceedings of SPIE, Vol.871, Space Structures, Power, and Power Conditioning, 11–13 January 1988, Los Angeles, California.
14. Davidson, J.L., Feather, D. (MS Thesis), Independent research “Dielectric Properties of Diamond in Capacitors” performed in the Vanderbilt Diamond Technology Program, Vanderbilt University, October 1991.
15. Nishimura, K., Das, K., and Glass, J.T., J. Appl. Phys. 69, 3142 (1991).
16. Tessmer, A.J., Plano, L.S., and Dreifus, D.L., IEEE Electron Device Lett. 14, 66 (1993).
17. G.Sh. Gildenblat, Grot, S.A., Hatfield, C.W., Badzian, A.R., and Badzian, T., IEEE Electron Device Lett. 11,371 (1990).
18. Zhao, G., Charlson, E.M., Charlson, E.J., Stacy, T., Meese, J.M., Popovici, G., and Prelas, M., J. Appl. Phys. 73, 1832 (1993).
19. Gomez-Yanez, C. and Alam, M., J. Appl. Phys. 71, 2303 (1992).

Development Of Diamond Based Power Microelectronics

  • J. L. Davidson (a1), W. P. Kang (a1), Y. Gurbuz (a1), D. V. Kerns (a1), L. Davis (a1), K. Holmes (a1), L. Jiang (a1), Venkata Pulugurta (a1), W. Anurat (a1) and M. Howell (a1)...

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