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Development Of Diamond Based Power Microelectronics

Published online by Cambridge University Press:  10 February 2011

J. L. Davidson ,
W. P. Kang ,
Y. Gurbuz ,
D. V. Kerns ,
L. Davis ,
K. Holmes ,
L. Jiang ,
Venkata Pulugurta ,
W. Anurat  and
M. Howell
J. L. Davidson
Affiliation:
ECE Dept., Vanderbilt School of Engineering, Vanderbilt University, Box 99–B, Nashville, TN 37027, jld@vuse.vanderbilt.edu
W. P. Kang
Affiliation:
ECE Dept., Vanderbilt School of Engineering, Vanderbilt University, Box 99–B, Nashville, TN 37027, jld@vuse.vanderbilt.edu
Y. Gurbuz
Affiliation:
ECE Dept., Vanderbilt School of Engineering, Vanderbilt University, Box 99–B, Nashville, TN 37027, jld@vuse.vanderbilt.edu
D. V. Kerns
Affiliation:
ECE Dept., Vanderbilt School of Engineering, Vanderbilt University, Box 99–B, Nashville, TN 37027, jld@vuse.vanderbilt.edu
L. Davis
Affiliation:
ECE Dept., Vanderbilt School of Engineering, Vanderbilt University, Box 99–B, Nashville, TN 37027, jld@vuse.vanderbilt.edu
K. Holmes
Affiliation:
ECE Dept., Vanderbilt School of Engineering, Vanderbilt University, Box 99–B, Nashville, TN 37027, jld@vuse.vanderbilt.edu
L. Jiang
Affiliation:
ECE Dept., Vanderbilt School of Engineering, Vanderbilt University, Box 99–B, Nashville, TN 37027, jld@vuse.vanderbilt.edu
Venkata Pulugurta
Affiliation:
ECE Dept., Vanderbilt School of Engineering, Vanderbilt University, Box 99–B, Nashville, TN 37027, jld@vuse.vanderbilt.edu
W. Anurat
Affiliation:
ECE Dept., Vanderbilt School of Engineering, Vanderbilt University, Box 99–B, Nashville, TN 37027, jld@vuse.vanderbilt.edu
M. Howell
Affiliation:
ECE Dept., Vanderbilt School of Engineering, Vanderbilt University, Box 99–B, Nashville, TN 37027, jld@vuse.vanderbilt.edu
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Abstract

Diamond based power device structures such as resistor, capacitor, Schottky diode, p-n diode, thyristor, and field emitters are being investigated. Diamond resistors similar to standard thick film components in form and dimension were fabricated of polycrystalline diamond film. Using PECVD (plasma-enhanced chemical vapor deposition) processing to achieve diamond dielectric layers, high power, high energy density capacitors have been built. Despite grain boundaries and defects of polycrystalline diamond film, electronic devices such as field-effecttransistors and Schottky diodes have been developed. We have fabricated micro-patterned microtip arrays with this versatile new diamond technology as electron emitters. This paper will review diamond technology and results of this work.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 53
Copyright
Copyright © Materials Research Society 1998

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References

1. Davidson, J.L., “High Dielectric Strength, Thin Gate for Semiconductor Electronics”, Final Report PL-TR-95-1124 for Philips Lab., Space and Missiles Technology Directorate, Air force Material Command, Kirtland Air Force, NM 87117-5776, Dec. 1995.Google Scholar
2. Kang, W. P., Davidson, J. L., Gurbuz, Y., and Kerns, D. V., “Temperature Dependence and Series Resistance Effect in Polycrystalline Diamond Based Metal-Insulator-Semiconductor Schottky Diode”, Journal of Applied Physics, 78(2), pp. 1101–1107, 1995.Google Scholar
3. Davidson, J.L. and Kang, W.P., “Examples of Diamond Sensing Applications”, (invited) Materials Research Society, Boston, Massachusetts, pp.699, Nov. 27–Dec. 1, 1995.Google Scholar
4. Davidson, J. L., Wur, D. R., Kang, W. P., Kinser, D. L., and Kerns, D. V., “Polycrystalline Diamond Pressure Microsensor”, Diamond and Related Materials, 5, pp. 86–92, 1996.Google Scholar
5. Kang, W. P., Davidson, J. L., Howell, M., Bhuva, B., Kinser, D. L., Kerns, D.V., Li, Q., and Xu, J.F., “Micro-Patterned Polycrystalline Diamond Field Emitter Vacuum Diode Arrays”, Journal of Vacuum Science Technology B, 14(3), pp. 2068–2071, 1996.Google Scholar
5. Kang, W. P., Davidson, J. L., Howell, M., Bhuva, B., Kinser, D. L., Kerns, D.V., Li, Q., and Xu, J.F., “Micro-Patterned Polycrystalline Diamond Field Emitter Vacuum Diode Arrays”, Journal of Vacuum Science Technology B, 14(3), pp. 2068–2071, 1996.Google Scholar
6. Yoder, M. N., “Application of Diamond Technology”, Proceedings of the Second Annual Technology Initiative Seminar, Durham, NC, 7–8 July, 1987.Google Scholar
7. Geis, M. W., IEEE Elec. Dev. Lett., Vol.8, pp. 34, 1987.10.1109/EDL.1987.26653Google Scholar
8. Shenai, K., “Diamond: A Semiconductor for High Temperature and High Power Electronics”, Proc. First International Symposium on Diamond and Diamond-like Film, Electrochemical Society, Vol.89–12, 1989.Google Scholar
9. Singer, A.T., “Strategies for CVD diamond cost reduction”, ECS Proceedings, Vol.95–4, pp.582, 1995.Google Scholar
10. Collins, A. T., “Formation of Electric Contacts on Insulating and Semiconducting Diamonds”, Diamond Res., pp. 19–20, 1970.Google Scholar
11. Kang, W. P., Davidson, J. L., Stults, T. G. (MS Thesis), Independent research “Electrical Characterization and Analysis of a Metal/Undoped Diamond/ Doped Diamond Schottky Diode”, Vanderbilt University, 1994.Google Scholar
12. Moazed, K. L., “Resistivity of Metal Contacts to Diamond”, Proc. First International Symposium on Diamond and Diamond-like Film, Electrochemical Society, Vol.89–12, 1989.Google Scholar
13. Davidson, J. L., Ellis, C., Baginski, T., “Multilevel DLC (diamondlike carbon) Capacitor Structure”, Proceedings of SPIE, Vol.871, Space Structures, Power, and Power Conditioning, 11–13 January 1988, Los Angeles, California.Google Scholar
14. Davidson, J.L., Feather, D. (MS Thesis), Independent research “Dielectric Properties of Diamond in Capacitors” performed in the Vanderbilt Diamond Technology Program, Vanderbilt University, October 1991.Google Scholar
15. Nishimura, K., Das, K., and Glass, J.T., J. Appl. Phys. 69, 3142 (1991).Google Scholar
16. Tessmer, A.J., Plano, L.S., and Dreifus, D.L., IEEE Electron Device Lett. 14, 66 (1993).Google Scholar
17. G.Sh. Gildenblat, Grot, S.A., Hatfield, C.W., Badzian, A.R., and Badzian, T., IEEE Electron Device Lett. 11,371 (1990).Google Scholar
18. Zhao, G., Charlson, E.M., Charlson, E.J., Stacy, T., Meese, J.M., Popovici, G., and Prelas, M., J. Appl. Phys. 73, 1832 (1993).Google Scholar
19. Gomez-Yanez, C. and Alam, M., J. Appl. Phys. 71, 2303 (1992).Google Scholar