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Development of Cu(InGa)Se2 Thin Film Solar Cells with Cd-Free Buffer Layers

Published online by Cambridge University Press:  10 February 2011

M. Konagai ,
Y. Ohtake  and
T. Okamoto
M. Konagai
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
Y. Ohtake
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
T. Okamoto
Affiliation:
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2–12-1, Ohokayama, Meguro-ku, Tokyo 152, Japan, konagai@pe.titech.ac.jp
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Abstract

Cu(InGa)Se2(CIGS) thin film absorbers were fabricated by a three-stage method using a coevaporation apparatus. As a Cd-free buffer layer, ZnSe, InxSe, GaxSey and ZnInxSey buffer layers have been deposited on the CIGS absorber continuously in the same apparatus. Atomic layer deposition (ALD) was employed as a growth technique for ZnSe. This technique offers a good thickness control as well as a good surface coverage. By irradiating with a solar simulator, all the solar cell parameters increased drastically for the first 50 minutes of the irradiation and then saturated at longer irradiation times. This phenomenon did not appear for the cells with a CdS buffer layer. The best efficiency of ZnO/ZnSe/CIGS thin film solar cells with about 10 nm thick ZnSe buffer layer was 11.6%. On the other hand, ZnO/InxSey/CIGS thin film solar cells showed very stable characteristics under the light illumination, and initial measurements show an efficiency of 13.0%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 153
Copyright
Copyright © Materials Research Society 1996

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References

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