Skip to main content Accessibility help
×
Home

Development of A 4H-SiC CMOS Inverter

  • Brett Adam Hull (a1), Sei-Hyung Ryu (a2), Husna Fatima (a3), Jim Richmond (a4), John W. Palmour (a5) and James Scofield (a6)...

Abstract

In this paper we report the first 4H-SiC CMOS inverter, which was designed to be integrated in the process flow of a 4H-SiC power DMOSFET. The channels of both of the n channel and p-channel MOSFETs of the inverter were 50 um wide by 3 um long. NMOSFET threshold voltage (VTH) ranged from 4.4 V at 25°C to 2.2 V at 250°C and PMOSFET VTH ranged from -4.75 V at 25°C to just under -4 V at 300°C. The transfer threshold voltage (Vm) of the 4H-SiC CMOS inverter was in a very tight range of 2.8 V to 2.9 V over the entire temperature range of 25°C to 300°C when using a drive voltage (VDD) of 10 V.

Copyright

References

Hide All
1 Ryu, S., Krishnaswami, S., Hull, B., Heath, B., Das, M., Richmond, J., Agarwal, A., and Palmour, J., Mater. Sci. Forum, Proceedings of ICSCRM 2005, Pittsburgh, PA, in press (2006).
2 Hull, B.A., Das, M.K., Richmond, J.T., Heath, B., Sumakeris, J.J., Geil, B., and Scozzie, C.J., Mater. Sci. Forum, Proceedings of ICSCRM 2005, Pittsburgh, PA, in press (2006).
3 Ryu, S., Kornegay, K.T., Cooper, J.A. Jr, and Melloch, M.R., IEEE Electron Device Lett., 18, 194 (1997).
4 Lam, M.P. and Kornegay, K.T., IEEE Trans. Electron Dev., 46, 546 (1999).
5 Afanas'ev, V.V., Bassler, M., Pensl, G., and Schulz, M., Phys. Stat. Sol. (a), 162, 321 (1997).
6 Lipkin, L.A. and Palmour, J.W., J. Electronic Materials, 25, 909 (1996).
7 Li, H., Dimitrijev, S., Harrison, H.B., and Sweatman, D., Appl. Phys. Lett. 70, 2028 (1997).
8 Chung, G.Y., Tin, C.C., Williams, J.R., McDonald, K., Ventra, M. Di, Pantelides, S.T., Feldman, L.C., and Weller, R.A., Appl. Phys. Lett., 76, 1713 (2000).
9 Han, J.S., Cheong, K.Y., Dimitrijev, S., Laube, M., and Pensl, G., Mater. Sci. Forum, 457–460, 1401 (2004).
10 Das, M.K., Haney, S.K., Ryu, S.-H., and Zhang, Q., presented at the 2006 Electronic Materials Conference, University Park, PA (2006).

Keywords

Development of A 4H-SiC CMOS Inverter

  • Brett Adam Hull (a1), Sei-Hyung Ryu (a2), Husna Fatima (a3), Jim Richmond (a4), John W. Palmour (a5) and James Scofield (a6)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed